Multiscale modeling of thin film deposition processes

Ionized physical vapor deposition (IPVD) and electrochemical deposition (ECD) are two major thin film deposition processes in the microelectronics industry. The ion fluxes with high kinetic energies in IPVD process involve complex surface interactions that affect overall topology of the microscale features. Copper ECD process involves complex surface reactions and transport phenomena that ranges over different length scales. In this work, predictive simulation tools for these two processes have been developed by investigating the surface reaction and the transport phenomena in IPVD and ECD processes. In the IPVD process, molecular dynamics (MD) techniques with embedded-atom potentials are used to study the surface reactions for atoms with high impinging energies (30 - 50 eV). The surface reaction rates are combined with ballistic transport and level set methods. The resulting tool demonstrates the effect of the kinetic energy driven surface diffusion on the feature profile evolution. For the ECD process of copper, detailed surface kinetic mechanisms are developed based on the competitive adsorption/desorption model in the presence of three representative additives, poly ethylene glycol (PEG) and bis-(sodium sulfoprophyl) (SPS) and chloride. The proposed kinetic mechanism is capable of describing the synergistic effect of different additives on the copper deposition. Statistically designed experiments were performed with the rotating disk electrode (RDE) apparatus. A hydrodynamic model was developed for RDE and is used to fit the kinetic parameters that are independent of the transport effect.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Chemical Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2002

Author dc:creator

• Kim, Gwang-Soo, 1975-

Advisor dc:contributor.advisor

• Klavs F. Jensen.

• Chemical Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/29277

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/29277