Inorganic semiconductors for printed transistors

CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts & Sciences.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

1999

Author dc:creator

• Ridley, Brent, 1974-

Advisor dc:contributor.advisor

• Joseph Jacobson.

• Architecture. Program in Media Arts & Sciences.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/29147

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/29147