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Massachusetts Institute of Technology

Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design

Abstract

dc:description.abstract

The difficulty in shrinking silicon transistors past a certain feature size has been acknowledged for years. Carbon nanotubes (CNTs) offer a technology with an exciting solution to the scaling issues of transistors and interconnects and with the possibility of coexistence in the present silicon technology. The goal of the present work is to propose circuit models for carbon nanotube field effect transistors (CNTFETs) and apply them to aspects of digital circuit design. This research models the current voltage characteristics of CNTFETs below and above threshold. The current characteristics are similar to MIOSFETs, but with a few caveats. Under standard conditions, the devices do not enter saturation. Also. it is shown that CNTFETs are ambipolar devices, with a minimum current at V[sub]ds/2. Despite this distinction from MOSFETs, CNTFETs show impressive voltage transfer characteristics (VTC), even at low voltages. The large noise margin and notable output voltage swing can be traded-off for higher on-current, depending on the nanotube diameter, as shown in this work. Thus, digital designers have an ability to control both performance and power by changing the nanotube diameters. Carbon nanotubes FETs can become prominent in the arena of array devices, which are a technical front runner for the integration of wires and transistors. This work shows that carbon nanotube field effect transistors have strong potential in read only memory (ROM) arrays. Many CNTFETs can be placed along the length of a nanotube to create intermolecular devices and small array applications. The present process variations within carbon nanotubes lead to possible metallic CNTs and added redundancy. The necessary redundancy is illustrated in detail

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2004

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Cline, Julia Van Meter, 1979-
Advisor dc:contributor.advisor
  • Anantha Chandrakasan and Dimitri Antoniadis.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
en_US

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/28489
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/28489

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Cline, Julia Van Meter, 1979-. Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design. Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28489