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Massachusetts Institute of Technology

Silicon carbide process development for microengine applications : residual stress control and microfabrication

Abstract

dc:description.abstract

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high speed at elevated temperatures (1300 to 1700 K). However, the thermal softening of silicon (Si) at temperatures above 900 K limits the highest achievable operating temperatures, which in turn significantly compromises the engine efficiency. Silicon carbide (SiC) offers great potential for improved microengine efficiency due to its high stiffness, strength, and resistance to oxidation at elevated temperatures. However, techniques for microfabricating SiC to the high level of precision needed for the microengine are not currently available. Given the limitations imposed by the SiC microfabrication difficulties, this thesis proposed Si-SiC hybrid turbine structures, explores key process steps, identified, and resolved critical problems in each of the processes along with a thorough characterization of the microstructures, mechanical properties, and composition of CVD SiC. Three key process steps for the Si-SiC hybrid structures are CVD SiC deposition on silicon wafers, wafer-level SiC planarization, and Si-to-SiC wafer bonding. Residual stress control in SiC coatings is of the most critical importance to the CVD process itself as well as to the subsequent wafer planarization, and bonding processes since residual stress-induced wafer bow increases the likelihood of wafer cracking significantly. Based on CVD parametric studies performed to determine the relationship between residual stresses in SiC and H2/MTS ratio, deposition temperature, and HCl/MTS ratio, very low residual stress (less than several tens of MPa) in thick CVD SiC coatings (up to -50 pm) was achieved.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2004

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Choi, Dongwon, 1973-
Advisor dc:contributor.advisor
  • S. Mark Spearing.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
en_US

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/28348
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/28348

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Choi, Dongwon, 1973-. Silicon carbide process development for microengine applications : residual stress control and microfabrication. Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28348