Langasite bulk acoustic wave resonant sensor for high temperature applications

(cont.) The self consistent defect model established the defect chemistry of langasite, enabling important parameters describing reduction (Er = 5.70± -0.06eV and 6.57±-0.24eV for acceptor and donor doped langasite respectively) and oxidation (Eo = 2.18±0.08eV), intrinsic electron-hole generation (Eg [approx. equals] 4.0-4.4eV) and defect ionization (ED-ion = 52±0.06eV for Nb ionization), to be extracted. The predictive defect model was used to calculate the dependence of the partial ionic and electronic conductivities and mass change as functions of temperature, dopant level and pO₂. Given that the magnitudes of conductivity and mass change directly affect the resolution and sensitivity limits of langasite resonators, their predictions allowed for the definition of acceptable operating limits and/or the design of properties for optimum resolution and sensitivity. Two high temperature applications of resonant sensors were studied. Praseodymiumcerium oxide was selected for oxygen partial pressure monitoring and is representative of films which change mass upon absorption or desorption of gaseous species. Barium carbonate film was selected for NO₂ sensing and is representative of films which change mass upon reaction with the gas phase to form a new product phase. Both sensors showed sensitivity to their respective target chemicals and demonstrated the feasibility of high temperature sensor applications. The performance of each sensor was discussed and suggestions for improving sensor performance were presented.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Seh, Huankiat, 1974-

Advisor dc:contributor.advisor

• Harry L. Tuller.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

en_US

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/27875

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/27875