Silver transport in CVD silicon carbide

Ion implantation and diffusion couple experiments were used to study silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in silicon carbide. Silver release is, however, likely dominated by vapor transport through cracks in SiC coatings. The results of silver ion implantation in silicon carbide and subsequent annealing at 1500ʻC place an upper limit on the silver diffusion coefficient in SiC of 5x10-21 m2/s, a value which is roughly 6 orders of magnitude less than the previous values reported in the literature. Silver diffusion should have been easily observable, but was not detected in SiC plates after heat treatments at 1500ʻC for times ranging between 200 h and 500 h. A detailed investigation of the silver morphology within the SiC both before and after heating showed that silver was immobilized at SiC grain boundaries and did not diffuse along them as expected. Novel spherical diffusion couples were fabricated containing silver inside shells of either graphite or SiC which were coated with CVD SiC. Mass measurements clearly revealed silver release from the diffusion couples after heating, but no silver was detected during concentration profile measurements in the SiC. Leak testing results, however, gave evidence of the presence of cracks in many of the SiC coatings, which may have provided pathways for silver escape. A simple vapor flow model was applied to estimate crack sizes that would account for silver release from SiC coatings in the current diffusion couples and coated fuel particle tests from the literature.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Nuclear Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2004

Author dc:creator

• MacLean, Heather J. (Heather Jean), 1974-

Advisor dc:contributor.advisor

• Ronald G. Ballinger.

• Nuclear Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/17745

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/17745