{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/17475"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/17475","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Design and fabrication of one-dimensional and two-dimensional photonic bandgap devices","abstract":"One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1-xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector ...","abstract_html":"One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1-xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector ...","abstract_has_math":false,"creators":["Lim, Kuo-Yi, 1969-"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science","school":null,"contributors":[],"advisors":["Leslie A. Kolodziejski."],"committee_chairs":[],"committee_members":[],"year":1999,"date_issued":"1999","date_published":"1999","updated_at":"2026-07-22T22:21:46Z","subjects":["Electrical Engineering and Computer Science"],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. 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The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1-xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector ..."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Design and fabrication of one-dimensional and two-dimensional photonic bandgap devices"]}]}],"canonical_facts":{"dc:contributor.advisor":["Leslie A. Kolodziejski."],"dc:contributor.department":["Massachusetts Institute of Technology. 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