{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/16748"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/16748","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications","abstract":"Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node.","abstract_html":"Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node.","abstract_has_math":false,"creators":["Lau, Kenneth Ka Shun, 1972-"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Chemical Engineering.","school":null,"contributors":[],"advisors":["Karen K. Gleason."],"committee_chairs":[],"committee_members":[],"year":2000,"date_issued":"2000","date_published":"2000","updated_at":"2026-07-22T22:20:54Z","subjects":["Chemical Engineering."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/16748","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Karen K. Gleason."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Chemical Engineering."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Dept. of Chemical Engineering."]},{"key":"dc:creator","label":"Author","values":["Lau, Kenneth Ka Shun, 1972-"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2005-05-19T14:27:20Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2005-05-19T14:27:20Z"]},{"key":"dc:date.issued","label":"Date","values":["2000"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemical Engineering."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/16748"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.","Includes bibliographical references.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections."]},{"key":"dc:description.abstract","label":"Abstract","values":["Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Karen K. Gleason."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Chemical Engineering."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Chemical Engineering."],"dc:creator":["Lau, Kenneth Ka Shun, 1972-"],"dc:date.accessioned":["2005-05-19T14:27:20Z"],"dc:date.available":["2005-05-19T14:27:20Z"],"dc:date.issued":["2000"],"dc:description":["Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.","Includes bibliographical references.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections."],"dc:description.abstract":["Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node."],"dc:description.degree":["Ph.D."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/16748"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Chemical Engineering."],"dc:title":["Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:20:54Z"}