{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/164040"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/164040","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Domain Wall Based Magnonics in Iron Garnet","abstract":"Magnonic devices leverage magnons, quantized spin waves, as the mechanism to process and transfer information. In materials with low Gilbert damping, these spin wave-based systems enable ultra-fast operation while eliminating thermal heating and leakage currents inherent to conventional electron-based microelectronics. To maximize energy efficiency and processing speed, materials like iron garnets, ferrimagnetic insulators with tunable magnetic properties, are essential. Key magnetic parameters, including saturation magnetization, perpendicular magnetic anisotropy, coercivity, and Gilbert damping, can be tailored through elemental substitution or strain engineering in thin films. Furthermore, relativistic domain wall velocities reported in yttrium iron garnet (YIG), bismuth substituted YIG, and thulium iron garnet lay the foundations for high-speed operation. These unique attributes position garnets as ideal materials for the development of magnonic devices that integrate efficiency, speed, and versatility. This thesis presents my research on integrating thin film garnets into a domain wall based magnonic devices. It begins by exploring the magnetic characterization of thin film iron garnets, including the growth process, temperature dependent magnetic behavior, and tunable magnetic anisotropy. Next, we report on magnonics within the garnet, focusing on the interactions between spin waves and domain walls. Finally, we demonstrate a write mechanism for a magnonic device driven by spin wave-induced domain wall motion, providing detailed characterization of the device behavior and performance. These results underscore the potential of iron garnets for magnonic-based device applications and offer insights into the efficiency of write mechanism, paving the way for energy-efficient high-speed spintronic technologies.","abstract_html":"Magnonic devices leverage magnons, quantized spin waves, as the mechanism to process and transfer information. In materials with low Gilbert damping, these spin wave-based systems enable ultra-fast operation while eliminating thermal heating and leakage currents inherent to conventional electron-based microelectronics. To maximize energy efficiency and processing speed, materials like iron garnets, ferrimagnetic insulators with tunable magnetic properties, are essential. Key magnetic parameters, including saturation magnetization, perpendicular magnetic anisotropy, coercivity, and Gilbert damping, can be tailored through elemental substitution or strain engineering in thin films. Furthermore, relativistic domain wall velocities reported in yttrium iron garnet (YIG), bismuth substituted YIG, and thulium iron garnet lay the foundations for high-speed operation. These unique attributes position garnets as ideal materials for the development of magnonic devices that integrate efficiency, speed, and versatility. This thesis presents my research on integrating thin film garnets into a domain wall based magnonic devices. It begins by exploring the magnetic characterization of thin film iron garnets, including the growth process, temperature dependent magnetic behavior, and tunable magnetic anisotropy. Next, we report on magnonics within the garnet, focusing on the interactions between spin waves and domain walls. Finally, we demonstrate a write mechanism for a magnonic device driven by spin wave-induced domain wall motion, providing detailed characterization of the device behavior and performance. These results underscore the potential of iron garnets for magnonic-based device applications and offer insights into the efficiency of write mechanism, paving the way for energy-efficient high-speed spintronic technologies.","abstract_has_math":false,"creators":["Gross, Miela J."],"institution":"Massachusetts Institute of Technology","degree_name":"Doctoral","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science","school":null,"contributors":[],"advisors":["Ross, Caroline A."],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-05","date_published":"2025-05","updated_at":"2026-07-22T22:21:52Z","subjects":[],"languages":[],"rights":["In Copyright - Educational Use Permitted","Copyright retained by author(s)"],"rights_urls":["https://rightsstatements.org/page/InC-EDU/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1721.1/164040","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Ross, Caroline A."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"]},{"key":"dc:creator","label":"Author","values":["Gross, Miela J."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2025-11-25T19:38:12Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2025-11-25T19:38:12Z"]},{"key":"dc:date.issued","label":"Date","values":["2025-05"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Doctoral","Doctor of Philosophy"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright - Educational Use Permitted","Copyright retained by author(s)"]},{"key":"dc:rights.uri","label":"Rights URI","values":["https://rightsstatements.org/page/InC-EDU/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1721.1/164040"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Magnonic devices leverage magnons, quantized spin waves, as the mechanism to process and transfer information. In materials with low Gilbert damping, these spin wave-based systems enable ultra-fast operation while eliminating thermal heating and leakage currents inherent to conventional electron-based microelectronics. To maximize energy efficiency and processing speed, materials like iron garnets, ferrimagnetic insulators with tunable magnetic properties, are essential. Key magnetic parameters, including saturation magnetization, perpendicular magnetic anisotropy, coercivity, and Gilbert damping, can be tailored through elemental substitution or strain engineering in thin films. Furthermore, relativistic domain wall velocities reported in yttrium iron garnet (YIG), bismuth substituted YIG, and thulium iron garnet lay the foundations for high-speed operation. These unique attributes position garnets as ideal materials for the development of magnonic devices that integrate efficiency, speed, and versatility. This thesis presents my research on integrating thin film garnets into a domain wall based magnonic devices. It begins by exploring the magnetic characterization of thin film iron garnets, including the growth process, temperature dependent magnetic behavior, and tunable magnetic anisotropy. Next, we report on magnonics within the garnet, focusing on the interactions between spin waves and domain walls. Finally, we demonstrate a write mechanism for a magnonic device driven by spin wave-induced domain wall motion, providing detailed characterization of the device behavior and performance. These results underscore the potential of iron garnets for magnonic-based device applications and offer insights into the efficiency of write mechanism, paving the way for energy-efficient high-speed spintronic technologies."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:title","label":"Title","values":["Domain Wall Based Magnonics in Iron Garnet"]}]}],"canonical_facts":{"dc:contributor.advisor":["Ross, Caroline A."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"],"dc:creator":["Gross, Miela J."],"dc:date.accessioned":["2025-11-25T19:38:12Z"],"dc:date.available":["2025-11-25T19:38:12Z"],"dc:date.issued":["2025-05"],"dc:description.abstract":["Magnonic devices leverage magnons, quantized spin waves, as the mechanism to process and transfer information. In materials with low Gilbert damping, these spin wave-based systems enable ultra-fast operation while eliminating thermal heating and leakage currents inherent to conventional electron-based microelectronics. To maximize energy efficiency and processing speed, materials like iron garnets, ferrimagnetic insulators with tunable magnetic properties, are essential. Key magnetic parameters, including saturation magnetization, perpendicular magnetic anisotropy, coercivity, and Gilbert damping, can be tailored through elemental substitution or strain engineering in thin films. Furthermore, relativistic domain wall velocities reported in yttrium iron garnet (YIG), bismuth substituted YIG, and thulium iron garnet lay the foundations for high-speed operation. These unique attributes position garnets as ideal materials for the development of magnonic devices that integrate efficiency, speed, and versatility. This thesis presents my research on integrating thin film garnets into a domain wall based magnonic devices. It begins by exploring the magnetic characterization of thin film iron garnets, including the growth process, temperature dependent magnetic behavior, and tunable magnetic anisotropy. Next, we report on magnonics within the garnet, focusing on the interactions between spin waves and domain walls. Finally, we demonstrate a write mechanism for a magnonic device driven by spin wave-induced domain wall motion, providing detailed characterization of the device behavior and performance. These results underscore the potential of iron garnets for magnonic-based device applications and offer insights into the efficiency of write mechanism, paving the way for energy-efficient high-speed spintronic technologies."],"dc:description.degree":["Ph.D."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/164040"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["In Copyright - Educational Use Permitted","Copyright retained by author(s)"],"dc:rights.uri":["https://rightsstatements.org/page/InC-EDU/1.0/"],"dc:title":["Domain Wall Based Magnonics in Iron Garnet"],"dc:type":["Thesis"],"thesis:degree_name":["Doctoral","Doctor of Philosophy"]},"updated_at":"2026-07-22T22:21:52Z"}