Opportunities in Advanced Wireless Integrated Circuits

The continued evolution of wireless communications, novel compact radars, and power electronics has driven demand for high-performance semiconductor materials capable of operating at higher power density, fast switching speeds, and improved efficiency. Gallium Nitride (GaN) has emerged as a leading candidate due to its superior electrical properties compared to traditional silicon (Si), silicon carbide (SiC), and gallium arsenide (GaAs). GaN’s high power density, thermal stability, and high-frequency operation make it an ideal candidate for applications in 5G/6G infrastructure, satellite communications, defense radar, electric vehicles, and power electronics. However, widespread commercial adoption of GaN faces significant barriers, including high production costs, supply chain constraints, and integration challenges within existing silicon-based fabrication processes. This thesis explores the opportunities and challenges associated with GaN-based integrated circuits (ICs) in the context of advanced wireless systems by utilizing Dr. Eugene Fitzgerald’s innovation framework – Technology, Markets, and Implementation (TMI). A comparative analysis of monolithic vs. board-level GaN integration is conducted. The research highlights that scaling GaN wafer production to approximately 10,000 wafers per year (200mm sized wafers) is necessary to achieve cost-effective monolithic integration, yet current defense-driven demand is insufficient to drive economies of scale. Instead, commercial applications—such as telecommunications, power electronics, and consumer RF devices—are target audiences that can take advantage of monolithic integration in high volume. The findings indicate that while defense applications have led non-monolithic GaN adoption (that is, discrete GaN transistor adoption), they cannot sustain large-scale production alone due to small volume. The semiconductor industry must navigate manufacturing bottlenecks, cost reduction strategies, and foundry availability to ensure GaN’s transition from a niche, high-cost technology to a commercially viable solution. By mapping the TMI intersections and addressing economic and technical barriers, this thesis provides strategic insights into how GaN technology can achieve scalable production, unlock new market opportunities, and shape the future of advanced wireless integrated circuits.

Name thesis:degree_name

Master

Department dc:contributor.department

System Design and Management Program.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2025

Author dc:creator

• Fareed, Mo

Advisor dc:contributor.advisor

• Fitzgerald, Eugene

Statement dc:rights

• In Copyright - Educational Use Permitted
• Copyright retained by author(s)

Licence dc:rights.uri

• https://rightsstatements.org/page/InC-EDU/1.0/

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/162529

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/162529