{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/153871"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/153871","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Kinetic Inductance Characterization of Thin 2H-NbSe₂ Superconductor Using Circuit Quantum Electrodynamics","abstract":"Wedeveloped hybrid superconducting microwave resonators incorporating van der Waals (vdW) superconductors to explore the microwave response of superconducting 2D materials in the GHz regime. We first established a reliable technique to contact thin NbSe₂, entirely encapsulated with hexagonal Boron Nitride (hBN), with a coplanar Al resonator. Then we fabricated hybrid Al-NbSe₂ resonators and measured the kinetic inductance of thin NbSe₂ at low-temperature and low-photon number limits. In this thesis, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe₂. Furthermore, we characterize DC bias current, and microwave power dependence of the kinetic inductance in the hybrid Al-NbSe₂ resonators. Our approach contributes to understanding the both DCand ACproperties of superconducting 2D materials with potential implications for their utilization in emerging technologies.","abstract_html":"Wedeveloped hybrid superconducting microwave resonators incorporating van der Waals (vdW) superconductors to explore the microwave response of superconducting 2D materials in the GHz regime. We first established a reliable technique to contact thin NbSe₂, entirely encapsulated with hexagonal Boron Nitride (hBN), with a coplanar Al resonator. Then we fabricated hybrid Al-NbSe₂ resonators and measured the kinetic inductance of thin NbSe₂ at low-temperature and low-photon number limits. In this thesis, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe₂. Furthermore, we characterize DC bias current, and microwave power dependence of the kinetic inductance in the hybrid Al-NbSe₂ resonators. Our approach contributes to understanding the both DCand ACproperties of superconducting 2D materials with potential implications for their utilization in emerging technologies.","abstract_has_math":false,"creators":["Zaman, Sameia"],"institution":"Massachusetts Institute of Technology","degree_name":"Master","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. 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We first established a reliable technique to contact thin NbSe₂, entirely encapsulated with hexagonal Boron Nitride (hBN), with a coplanar Al resonator. Then we fabricated hybrid Al-NbSe₂ resonators and measured the kinetic inductance of thin NbSe₂ at low-temperature and low-photon number limits. In this thesis, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe₂. Furthermore, we characterize DC bias current, and microwave power dependence of the kinetic inductance in the hybrid Al-NbSe₂ resonators. Our approach contributes to understanding the both DCand ACproperties of superconducting 2D materials with potential implications for their utilization in emerging technologies."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Kinetic Inductance Characterization of Thin 2H-NbSe₂ Superconductor Using Circuit Quantum Electrodynamics"]}]}],"canonical_facts":{"dc:contributor.advisor":["Oliver, William D."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"],"dc:creator":["Zaman, Sameia"],"dc:date.accessioned":["2024-03-21T19:12:27Z"],"dc:date.available":["2024-03-21T19:12:27Z"],"dc:date.issued":["2024-02"],"dc:description.abstract":["Wedeveloped hybrid superconducting microwave resonators incorporating van der Waals (vdW) superconductors to explore the microwave response of superconducting 2D materials in the GHz regime. We first established a reliable technique to contact thin NbSe₂, entirely encapsulated with hexagonal Boron Nitride (hBN), with a coplanar Al resonator. Then we fabricated hybrid Al-NbSe₂ resonators and measured the kinetic inductance of thin NbSe₂ at low-temperature and low-photon number limits. In this thesis, we discuss the observed relation between the kinetic inductance and the thickness of the thin NbSe₂. Furthermore, we characterize DC bias current, and microwave power dependence of the kinetic inductance in the hybrid Al-NbSe₂ resonators. Our approach contributes to understanding the both DCand ACproperties of superconducting 2D materials with potential implications for their utilization in emerging technologies."],"dc:description.degree":["S.M."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/153871"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["In Copyright - Educational Use Permitted","Copyright retained by author(s)"],"dc:rights.uri":["https://rightsstatements.org/page/InC-EDU/1.0/"],"dc:title":["Kinetic Inductance Characterization of Thin 2H-NbSe₂ Superconductor Using Circuit Quantum Electrodynamics"],"dc:type":["Thesis"],"thesis:degree_name":["Master","Master of Science in Electrical Engineering and Computer Science"]},"updated_at":"2026-07-22T22:21:24Z"}