{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/153693"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/153693","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Modeling Compact Non-Volatile Photonic Switching Based on Optical Phase Change Material and Graphene Heater","abstract":"On-chip photonic switches are the building blocks for programable integrated circuits (PICs) and the integration of phase change materials (PCMs) enables promising designs which are compact, non-volatile, and efficient. However, conventional PCMs such as Ge₂Sb₂Te₅ (GST) introduce significant optical absorption loss, leading to elevated insertion losses in devices. Current approaches, compensating for this loss through weak evanescent light-PCM interactions, result in larger footprint devices. A compact non-volatile 2 × 2 switch design is introduced, leveraging optical concentration in slot waveguide modes to significantly enhance interactions of light with PCM, thereby realizing a compact, efficient photonic switch. The crystalline-amorphous phase transitions are driven by an integrated single-layer graphene heater, providing high electro-thermal efficiency, low absorption loss, and rapid switching speed. Computational simulations demonstrate reversible phase transitions of Sb₂Se₃ facilitating 2 working states with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL)bandwidth. The proposed photonic switch architecture can constitute the cornerstone for next-generation high-performance reconfigurable photonic circuits.","abstract_html":"On-chip photonic switches are the building blocks for programable integrated circuits (PICs) and the integration of phase change materials (PCMs) enables promising designs which are compact, non-volatile, and efficient. However, conventional PCMs such as Ge₂Sb₂Te₅ (GST) introduce significant optical absorption loss, leading to elevated insertion losses in devices. Current approaches, compensating for this loss through weak evanescent light-PCM interactions, result in larger footprint devices. A compact non-volatile 2 × 2 switch design is introduced, leveraging optical concentration in slot waveguide modes to significantly enhance interactions of light with PCM, thereby realizing a compact, efficient photonic switch. The crystalline-amorphous phase transitions are driven by an integrated single-layer graphene heater, providing high electro-thermal efficiency, low absorption loss, and rapid switching speed. Computational simulations demonstrate reversible phase transitions of Sb₂Se₃ facilitating 2 working states with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL)bandwidth. The proposed photonic switch architecture can constitute the cornerstone for next-generation high-performance reconfigurable photonic circuits.","abstract_has_math":false,"creators":["Dao, Khoi Phuong"],"institution":"Massachusetts Institute of Technology","degree_name":"Master","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. 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However, conventional PCMs such as Ge₂Sb₂Te₅ (GST) introduce significant optical absorption loss, leading to elevated insertion losses in devices. Current approaches, compensating for this loss through weak evanescent light-PCM interactions, result in larger footprint devices. A compact non-volatile 2 × 2 switch design is introduced, leveraging optical concentration in slot waveguide modes to significantly enhance interactions of light with PCM, thereby realizing a compact, efficient photonic switch. The crystalline-amorphous phase transitions are driven by an integrated single-layer graphene heater, providing high electro-thermal efficiency, low absorption loss, and rapid switching speed. Computational simulations demonstrate reversible phase transitions of Sb₂Se₃ facilitating 2 working states with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL)bandwidth. The proposed photonic switch architecture can constitute the cornerstone for next-generation high-performance reconfigurable photonic circuits."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Modeling Compact Non-Volatile Photonic Switching Based on Optical Phase Change Material and Graphene Heater"]}]}],"canonical_facts":{"dc:contributor.advisor":["Hu, Juejun"],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Materials Science and Engineering"],"dc:creator":["Dao, Khoi Phuong"],"dc:date.accessioned":["2024-03-13T13:27:12Z"],"dc:date.available":["2024-03-13T13:27:12Z"],"dc:date.issued":["2024-02"],"dc:description.abstract":["On-chip photonic switches are the building blocks for programable integrated circuits (PICs) and the integration of phase change materials (PCMs) enables promising designs which are compact, non-volatile, and efficient. However, conventional PCMs such as Ge₂Sb₂Te₅ (GST) introduce significant optical absorption loss, leading to elevated insertion losses in devices. Current approaches, compensating for this loss through weak evanescent light-PCM interactions, result in larger footprint devices. A compact non-volatile 2 × 2 switch design is introduced, leveraging optical concentration in slot waveguide modes to significantly enhance interactions of light with PCM, thereby realizing a compact, efficient photonic switch. The crystalline-amorphous phase transitions are driven by an integrated single-layer graphene heater, providing high electro-thermal efficiency, low absorption loss, and rapid switching speed. Computational simulations demonstrate reversible phase transitions of Sb₂Se₃ facilitating 2 working states with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL)bandwidth. The proposed photonic switch architecture can constitute the cornerstone for next-generation high-performance reconfigurable photonic circuits."],"dc:description.degree":["S.M."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/153693"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["In Copyright - Educational Use Permitted","Copyright retained by author(s)"],"dc:rights.uri":["https://rightsstatements.org/page/InC-EDU/1.0/"],"dc:title":["Modeling Compact Non-Volatile Photonic Switching Based on Optical Phase Change Material and Graphene Heater"],"dc:type":["Thesis"],"thesis:degree_name":["Master","Master of Science in Materials Science and Engineering"]},"updated_at":"2026-07-22T22:22:13Z"}