{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/150107"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/150107","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Current-induced Dynamics of Easy-Plane Antiferromagnets","abstract":"Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge. In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction. These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.","abstract_html":"Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge. In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction. These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.","abstract_has_math":false,"creators":["Zhang, Pengxiang"],"institution":"Massachusetts Institute of Technology","degree_name":"Doctoral","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science","school":null,"contributors":[],"advisors":["Liu, Luqiao"],"committee_chairs":[],"committee_members":[],"year":2023,"date_issued":"2023-02","date_published":"2023-02","updated_at":"2026-07-22T22:22:30Z","subjects":[],"languages":[],"rights":["In Copyright - Educational Use Permitted","Copyright MIT"],"rights_urls":["http://rightsstatements.org/page/InC-EDU/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1721.1/150107","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Liu, Luqiao"]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. 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However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge. In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction. These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:title","label":"Title","values":["Current-induced Dynamics of Easy-Plane Antiferromagnets"]}]}],"canonical_facts":{"dc:contributor.advisor":["Liu, Luqiao"],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"],"dc:creator":["Zhang, Pengxiang"],"dc:date.accessioned":["2023-03-31T14:32:47Z"],"dc:date.available":["2023-03-31T14:32:47Z"],"dc:date.issued":["2023-02"],"dc:description.abstract":["Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge. In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction. These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices."],"dc:description.degree":["Ph.D."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/150107"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["In Copyright - Educational Use Permitted","Copyright MIT"],"dc:rights.uri":["http://rightsstatements.org/page/InC-EDU/1.0/"],"dc:title":["Current-induced Dynamics of Easy-Plane Antiferromagnets"],"dc:type":["Thesis"],"thesis:degree_name":["Doctoral","Doctor of Philosophy"]},"updated_at":"2026-07-22T22:22:30Z"}