Implosion Fabrication: Rethinking 3D Nanofabrication from First Principles

Micro- and nanofabrication has revolutionized the world by enabling the explosion of ubiquitous electronic products and devices. However, the traditional lithography and deposition methods used in micro- and nanofabrication processes are planar in nature, with limited capacity for creating complex 3D structures. Techniques for 3D nanofabrication would ideally allow independent control over the geometry, feature size, and chemical composition of the final material. To address these needs, we invented a fundamentally new technology for nanofabrication called Implosion Fabrication (ImpFab). This technology was borne of three basic insights. First, that 2D nanofabrication is predicated on the planar deposition of functional materials; therefore, a truly 3D nanofabrication process might be enabled by a method for volumetric deposition of functional materials. Second, that by patterning inside a scaffold material, such as hydrogel, it is possible to not only create any geometry, but also pattern gradients and multiple different materials. Lastly, that a controllably shrinkable scaffold allows for the chemical assembly of materials in 3D patterns at one scale, which once shrunken, can increase the resolution and concentration of the patterned materials. This means the original patterning and deposition steps can be performed using machinery far less precise, and thus less expensive, than used for traditional 2D nanofabrication while eliminating the need to pattern sequential layers, vastly increasing the speed of 3D patterning while making layer-layer registration irrelevant. As a result, ImpFab expands the possibilities of nanofabrication in several fundamental ways that gives it the potential to create a revolution in fabrication much in the same way the planar process did for computation (Moore’s law) and microelectromechanical systems.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Program in Media Arts and Sciences (Massachusetts Institute of Technology)

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2021

Author dc:creator

• Oran, Daniel

Advisor dc:contributor.advisor

• Boyden, Edward S.

Statement dc:rights

• In Copyright - Educational Use Permitted
• Copyright MIT

Licence dc:rights.uri

• http://rightsstatements.org/page/InC-EDU/1.0/

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/142819

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/142819