Ge and GeSi electroabsorption modulator arrays via strain and composition engineering

Electronic and photonic integrated circuits serve as a promising platform for telecommunications and sensing applications. Electroabsorption modulators allow fast modulation, small device footprint, and low power consumption. Epitaxially grown GeSi films on SOI substrates are a suitable materials platform for integrated modulator applications. A modulator's operation wavelength adjustment and its system integration for broadband modulation are two major challenges of fabricating on-chip modulator arrays for telecommunication. Unlike Si MZI modulators, GeSi electroabsorption modulators are not broadband due to its limited working region near absorption edge for the Franz-Keldysh effect. Optimization of a modulator material for a target wavelength can be achieved by tuning material composition or applying strain to the material.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Materials Science and Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2020

Author dc:creator

• Ma, Danhao.

Advisor dc:contributor.advisor

• Jurgen Michel, Lionel C. Kimerling and Anuradha M. Agarwal.

• Materials Science and Engineering.

Statement dc:rights

• MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/129033

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/129033