{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/128350"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/128350","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"GaN electronics for high-temperature applications","abstract":"Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature.","abstract_html":"Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature.","abstract_has_math":false,"creators":["Yuan, Mengyang."],"institution":"Massachusetts Institute of Technology","degree_name":"Master","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science","school":null,"contributors":[],"advisors":["Tomás Palacios."],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020","date_published":"2020","updated_at":"2026-07-22T22:21:55Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["MIT theses may be protected by copyright. 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However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["GaN electronics for high-temperature applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Tomás Palacios."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science","EECS"],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Yuan, Mengyang."],"dc:date.accessioned":["2020-11-03T20:32:20Z"],"dc:date.available":["2020-11-03T20:32:20Z"],"dc:date.issued":["2020"],"dc:description":["Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February, 2020","Cataloged from PDF version of thesis.","Includes bibliographical references (pages 95-100)."],"dc:description.abstract":["Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature."],"dc:description.degree":["S.M."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/128350"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["GaN electronics for high-temperature applications"],"dc:type":["Thesis"],"thesis:degree_name":["Master"]},"updated_at":"2026-07-22T22:21:55Z"}