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Massachusetts Institute of Technology
Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers
Abstract
dc:descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Dept. of Materials Science and Engineering
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 1993
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Jang, Syun-Ming
- Advisor dc:contributor.advisor
-
- Rafael Reif.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/12744
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/12744