Large-scale high-density terahertz radiator and receiver Arrays on silicon chips

Electromagnetic (EM) waves in the terahertz (THz) frequency range (usually deαned as from 10⁻¹ THz to 10¹ THz) have important applications in gas sensing, non-invasive imaging, short-range ultra-high-data-rate wireline/wireless communications. Historically, due to their speed limit, silicon-based transistors are unable to reach this frequency range, so terahertz systems were built upon high- cost custom-made devices, which limits their application space. Currently, thanks to Moore's law, the f[subscript max] of many transistors in commercially-available processes have reached the terahertz region, making generating terahertz waves from DC on low-cost chips possible, but due to limited gain, generating high-power terahertz waves is still a challenge.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2020

Author dc:creator

• Hu, Zhi,Ph. D.Massachusetts Institute of Technology.

Advisor dc:contributor.advisor

• Ruonan Han.

• Electrical Engineering and Computer Science.

Statement dc:rights

• MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/127026

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/127026