Radiation modelling of vacuum field emission devices

Recent advances in micro and nanofabrication techniques have enabled modern vacuum field emission devices (VacFEDs) and have been demonstrated in the laboratory for use as diodes and transistors. Modern VacFEDs operate through cold emission of electrons across a vacuum gap. It has been proposed that these devices are "radiation insensitive" since they do not have a solid state junction as in other modern electronic devices. Radiation testing has been conducted to characterize the radiation response for these devices however, minimal supporting modeling has been performed. This thesis attempts to model and quantify the radiation effects of modern VacFEDs.

Name thesis:degree_name

Master

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Nuclear Science and Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Reynolds, Adam Fisher.

Advisor dc:contributor.advisor

• Benoit Forget.

• Nuclear Science and Engineering.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/123359

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/123359