Commercialization of group III nitrides-on-silicon technologies

While group Ill nitride materials have been commercialized for many years, there is recent interest in growing these materials on silicon substrates as a cost effective alternative to more expensive sapphire and silicon carbide technologies. Therefore, it is necessary to determine how group Ill nitride-on-silicon technologies can be positioned in way for them to be effective in their respective applications, thereby enabling their commercialization. This thesis is a systematic evaluation of the epitaxial growth on silicon carbide, sapphire and silicon substrates, focusing on their lattice-mismatches, thermal expansion mismatches, and thermal conductivity. The subsequent analysis of important commercial applications determined that GaN-on-Si technology is ready for commercialization in the near future. These applications include the InGaN/GaN white light emitting diode and the blue laser diode, as well as the AIGaN/GaN high electron mobility transistor, each with its own unique requirements for the technology and the implementation. It was recommended that start-up firms interested in commercializing GaN-on- Si technology focus on the growth of GaN on silicon substrates and engage device manufacturers proactively. InN and In-rich nitrides can complement maturing GaN and Ga-rich nitrides technologies, resulting in new applications and products in future. While the growth of InN films is currently very challenging, it is believed that the experience and revenue obtained from the commercialization of GaN-on-Si technology can benefit InN-on-Si technology, speeding up the latter's commercialization. A brief business strategy aimed at translating the findings into a feasible approach for commercialization is also provided.

Name thesis:degree_name

Master

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Materials Science and Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2010

Author dc:creator

• Seetoh, Ian Peiyuan.

Advisor dc:contributor.advisor

• Eugene A. Fitzgerald and Soo-Jin Chua.

• Materials Science and Engineering.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/122862

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/122862