InGaAs MOSFETs for logic and RF applications : reliability, scalability and transport studies

InGaAs has emerged as an extraordinary n-channel material due to its superb electron transport properties and low voltage operation. With tremendous advancements over the years, InGaAs MOSFETs have attracted much attention as promising device candidates for both logic and THz applications. However, many challenges remain. This thesis addresses some of the critical issues facing InGaAs MOSFETs and advances the understanding of the limiting factors confronting InGaAs MOSFET technology. First, it identifies a new instability mechanism in self-aligned InGaAs MOSFETs caused by fluorine migration and passivation of Si dopants in n-InAlAs. This problem is successfully mitigated by eliminating n-InAlAs from the device structure. The new device design achieves improved stability and record device performance. Second, it evaluates the impact of oxide trapping in InGaAs MOSFETs.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Cai, Xiaowei,Ph.D.Massachusetts Institute of Technology.

Advisor dc:contributor.advisor

• Jesús A. del Alamo.

• Electrical Engineering and Computer Science.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/122683

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/122683