Atomistic modeling and simulations of 2D materials : chemical vapor deposition, nanoporous defects, force-field development, wetting, and friction

Two-dimensional (2D) materials, such as, graphene, transition metal dichalcogenides (TMDs) (e.g., molybdenum disulfide (MoS₂)), and hexagonal boron nitride (hBN), have recently received considerable attention, due to their layer-number-dependent optoelectronic, mechanical, and barrier properties. However, physical understanding of the controlled synthesis and interfacial behavior of 2D materials is still lacking. In this thesis: First, I construct a generalized mechanistic model for the growth of TMD monolayers using chemical vapor deposition (CVD). Combining kinetic Monte Carlo (KMC) simulations and a chemical engineering transport model, I am able to predict the experimentally-observed shape and size evolution of the MoS₂ morphology inside a CVD reactor. Second, I address the challenge of solving the Isomer Cataloging Problem (ICP) for lattice nanopores in 2D materials.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Chemical Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Govind Rajan, Ananth.

Advisor dc:contributor.advisor

• Daniel Blankschtein and Michael S. Strano.

• Chemical Engineering.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/121706

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/121706