{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/114090"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/114090","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Oxygen precipitate studies in silicon for gettering in solar cell applications","abstract":"Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small.","abstract_html":"Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small.","abstract_has_math":false,"creators":["Salomon, Ashley"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Materials Science and Engineering.","school":null,"contributors":[],"advisors":["Lionel C. Kimerling."],"committee_chairs":[],"committee_members":[],"year":2001,"date_issued":"2001","date_published":"2001","updated_at":"2026-07-22T22:21:59Z","subjects":["Materials Science and Engineering."],"languages":["eng"],"rights":["MIT theses are protected by copyright. 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They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/114090"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.","Cataloged from PDF version of thesis.","Includes bibliographical references (page 31)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.B."]},{"key":"dc:title","label":"Title","values":["Oxygen precipitate studies in silicon for gettering in solar cell applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Lionel C. Kimerling."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."],"dc:creator":["Salomon, Ashley"],"dc:date.accessioned":["2018-03-12T19:29:27Z"],"dc:date.available":["2018-03-12T19:29:27Z"],"dc:date.issued":["2001"],"dc:description":["Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.","Cataloged from PDF version of thesis.","Includes bibliographical references (page 31)."],"dc:description.abstract":["Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small."],"dc:description.degree":["S.B."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/114090"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["MIT theses are protected by copyright. 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