{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/114086"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/114086","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Materials characterization and transmission analysis in erbium-doped gallium nitride microresonator structures","abstract":"GaN:Er is an attractive material for room temperature 1.54 pm luminescence enhancement devices for use in telecommunications because it does not experience thermal quenching at room temperature like Si:Er and can be electronically pumped. GaN:Er layers grown by molecular beam epitaxy (MBE) on single crystal substrates have shown excellent room temperature 1.54 [mu]m luminescence, but to integrate GaN:Er into microresonator devices it is necessary to grow a good quality GaN:Er film on an amorphous substrate. This thesis examines the optical properties and morphology of GaN:Er layers grown on Si₃N₄ and SiO₂ substrates, and evaluates two microresonator devices with incorporated GaN:Er layers. GaN:Er layers grown by MBE on SiO₂ and Si₃N₄ substrates were shown to give room temperature luminescence comparable to that of GaN:Er grown on (11 1)Si. GaN:Er layers grown on a buffered oxide etched Si₃N₄ substrate showed the best luminescence. The ability to grow good quality layers on amorphous substrates allows GaN:Er to be used in waveguide devices, the first of which studied was the microring resonator. Microring resonators were made by depositing a blanket GaN:Er layer on patterned Si₃N₄ microring structures. These structures were damaged, and transmission measurements were not possible. When looking at surface roughness measurements it appears that channel waveguide structures are unsuitable for GaN:Er grown on amorphous substrates, and so a ridge waveguide structure is proposed to lower this surface roughness scattering loss. A microcavity with a GaN:Er defect layer and a-Si/a-SiO₂ stacks was fabricated and tested for luminescence enhancement. The refractive index of GaN:Er was determined by reflectance measurements to be 2.1. The layer was not of uniform thickness which led to a broad resonance peak, but a distortion of the spectrum including a lower luminescence at the 1517 nm peak and a higher luminescence at the 1557 nm peak were observed, which suggests enhancement by the microcavity.","abstract_html":"GaN:Er is an attractive material for room temperature 1.54 pm luminescence enhancement devices for use in telecommunications because it does not experience thermal quenching at room temperature like Si:Er and can be electronically pumped. GaN:Er layers grown by molecular beam epitaxy (MBE) on single crystal substrates have shown excellent room temperature 1.54 [mu]m luminescence, but to integrate GaN:Er into microresonator devices it is necessary to grow a good quality GaN:Er film on an amorphous substrate. This thesis examines the optical properties and morphology of GaN:Er layers grown on Si₃N₄ and SiO₂ substrates, and evaluates two microresonator devices with incorporated GaN:Er layers. GaN:Er layers grown by MBE on SiO₂ and Si₃N₄ substrates were shown to give room temperature luminescence comparable to that of GaN:Er grown on (11 1)Si. GaN:Er layers grown on a buffered oxide etched Si₃N₄ substrate showed the best luminescence. The ability to grow good quality layers on amorphous substrates allows GaN:Er to be used in waveguide devices, the first of which studied was the microring resonator. Microring resonators were made by depositing a blanket GaN:Er layer on patterned Si₃N₄ microring structures. These structures were damaged, and transmission measurements were not possible. When looking at surface roughness measurements it appears that channel waveguide structures are unsuitable for GaN:Er grown on amorphous substrates, and so a ridge waveguide structure is proposed to lower this surface roughness scattering loss. A microcavity with a GaN:Er defect layer and a-Si/a-SiO₂ stacks was fabricated and tested for luminescence enhancement. The refractive index of GaN:Er was determined by reflectance measurements to be 2.1. The layer was not of uniform thickness which led to a broad resonance peak, but a distortion of the spectrum including a lower luminescence at the 1517 nm peak and a higher luminescence at the 1557 nm peak were observed, which suggests enhancement by the microcavity.","abstract_has_math":false,"creators":["Gibbons, David M"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Materials Science and Engineering.","school":null,"contributors":[],"advisors":["Kazumi Wada and Lionel C. Kimerling."],"committee_chairs":[],"committee_members":[],"year":2001,"date_issued":"2001","date_published":"2001","updated_at":"2026-07-22T22:21:11Z","subjects":["Materials Science and Engineering."],"languages":["eng"],"rights":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/114086","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Kazumi Wada and Lionel C. Kimerling."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."]},{"key":"dc:creator","label":"Author","values":["Gibbons, David M"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2018-03-12T19:29:17Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2018-03-12T19:29:17Z"]},{"key":"dc:date.issued","label":"Date","values":["2001"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Materials Science and Engineering."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/114086"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.","Cataloged from PDF version of thesis. \"June 2001.\"","Includes bibliographical references (pages 47-48)."]},{"key":"dc:description.abstract","label":"Abstract","values":["GaN:Er is an attractive material for room temperature 1.54 pm luminescence enhancement devices for use in telecommunications because it does not experience thermal quenching at room temperature like Si:Er and can be electronically pumped. GaN:Er layers grown by molecular beam epitaxy (MBE) on single crystal substrates have shown excellent room temperature 1.54 [mu]m luminescence, but to integrate GaN:Er into microresonator devices it is necessary to grow a good quality GaN:Er film on an amorphous substrate. This thesis examines the optical properties and morphology of GaN:Er layers grown on Si₃N₄ and SiO₂ substrates, and evaluates two microresonator devices with incorporated GaN:Er layers. GaN:Er layers grown by MBE on SiO₂ and Si₃N₄ substrates were shown to give room temperature luminescence comparable to that of GaN:Er grown on (11 1)Si. GaN:Er layers grown on a buffered oxide etched Si₃N₄ substrate showed the best luminescence. The ability to grow good quality layers on amorphous substrates allows GaN:Er to be used in waveguide devices, the first of which studied was the microring resonator. Microring resonators were made by depositing a blanket GaN:Er layer on patterned Si₃N₄ microring structures. These structures were damaged, and transmission measurements were not possible. When looking at surface roughness measurements it appears that channel waveguide structures are unsuitable for GaN:Er grown on amorphous substrates, and so a ridge waveguide structure is proposed to lower this surface roughness scattering loss. A microcavity with a GaN:Er defect layer and a-Si/a-SiO₂ stacks was fabricated and tested for luminescence enhancement. The refractive index of GaN:Er was determined by reflectance measurements to be 2.1. The layer was not of uniform thickness which led to a broad resonance peak, but a distortion of the spectrum including a lower luminescence at the 1517 nm peak and a higher luminescence at the 1557 nm peak were observed, which suggests enhancement by the microcavity."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.B."]},{"key":"dc:title","label":"Title","values":["Materials characterization and transmission analysis in erbium-doped gallium nitride microresonator structures"]}]}],"canonical_facts":{"dc:contributor.advisor":["Kazumi Wada and Lionel C. Kimerling."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Materials Science and Engineering."],"dc:creator":["Gibbons, David M"],"dc:date.accessioned":["2018-03-12T19:29:17Z"],"dc:date.available":["2018-03-12T19:29:17Z"],"dc:date.issued":["2001"],"dc:description":["Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.","Cataloged from PDF version of thesis. \"June 2001.\"","Includes bibliographical references (pages 47-48)."],"dc:description.abstract":["GaN:Er is an attractive material for room temperature 1.54 pm luminescence enhancement devices for use in telecommunications because it does not experience thermal quenching at room temperature like Si:Er and can be electronically pumped. GaN:Er layers grown by molecular beam epitaxy (MBE) on single crystal substrates have shown excellent room temperature 1.54 [mu]m luminescence, but to integrate GaN:Er into microresonator devices it is necessary to grow a good quality GaN:Er film on an amorphous substrate. This thesis examines the optical properties and morphology of GaN:Er layers grown on Si₃N₄ and SiO₂ substrates, and evaluates two microresonator devices with incorporated GaN:Er layers. GaN:Er layers grown by MBE on SiO₂ and Si₃N₄ substrates were shown to give room temperature luminescence comparable to that of GaN:Er grown on (11 1)Si. GaN:Er layers grown on a buffered oxide etched Si₃N₄ substrate showed the best luminescence. The ability to grow good quality layers on amorphous substrates allows GaN:Er to be used in waveguide devices, the first of which studied was the microring resonator. Microring resonators were made by depositing a blanket GaN:Er layer on patterned Si₃N₄ microring structures. These structures were damaged, and transmission measurements were not possible. When looking at surface roughness measurements it appears that channel waveguide structures are unsuitable for GaN:Er grown on amorphous substrates, and so a ridge waveguide structure is proposed to lower this surface roughness scattering loss. A microcavity with a GaN:Er defect layer and a-Si/a-SiO₂ stacks was fabricated and tested for luminescence enhancement. The refractive index of GaN:Er was determined by reflectance measurements to be 2.1. The layer was not of uniform thickness which led to a broad resonance peak, but a distortion of the spectrum including a lower luminescence at the 1517 nm peak and a higher luminescence at the 1557 nm peak were observed, which suggests enhancement by the microcavity."],"dc:description.degree":["S.B."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/114086"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Materials Science and Engineering."],"dc:title":["Materials characterization and transmission analysis in erbium-doped gallium nitride microresonator structures"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:11Z"}