{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/113116"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/113116","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Near junction thermal management of GaN HEMTs via wafer bonding","abstract":"Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields.","abstract_html":"Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields.","abstract_has_math":false,"creators":["Radway, Robert M"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Tomás Palacios."],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017","date_published":"2017","updated_at":"2026-07-22T22:20:52Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/113116","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Tomás Palacios."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Radway, Robert M"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2018-01-12T20:57:02Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2018-01-12T20:57:02Z"]},{"key":"dc:date.issued","label":"Date","values":["2017"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering and Computer Science."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/113116"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.","Cataloged from student-submitted PDF version of thesis.","Includes bibliographical references (pages 101-109)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["M. Eng."]},{"key":"dc:title","label":"Title","values":["Near junction thermal management of GaN HEMTs via wafer bonding"]}]}],"canonical_facts":{"dc:contributor.advisor":["Tomás Palacios."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Radway, Robert M"],"dc:date.accessioned":["2018-01-12T20:57:02Z"],"dc:date.available":["2018-01-12T20:57:02Z"],"dc:date.issued":["2017"],"dc:description":["Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.","Cataloged from student-submitted PDF version of thesis.","Includes bibliographical references (pages 101-109)."],"dc:description.abstract":["Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields."],"dc:description.degree":["M. Eng."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/113116"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Near junction thermal management of GaN HEMTs via wafer bonding"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:20:52Z"}