Massachusetts Institute of Technology
T-junction resonant modulators and detectors in CMOS
Abstract
dc:description.abstractDesign of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 2016
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Cheian, Dinis
- Advisor dc:contributor.advisor
-
- Rajeev Ram.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/112823
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/112823