{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/103495"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/103495","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content","abstract":"Tin sulfide (SnS), a potential p-type absorber material for photovoltaic applications, is hampered by poor carrier-transport properties, particularly minority-carrier lifetime. This study investigates the role of intrinsic and extrinsic crystallographic point defects on the electronic transport properties of SnS. High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements.","abstract_html":"Tin sulfide (SnS), a potential p-type absorber material for photovoltaic applications, is hampered by poor carrier-transport properties, particularly minority-carrier lifetime. This study investigates the role of intrinsic and extrinsic crystallographic point defects on the electronic transport properties of SnS. High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements.","abstract_has_math":false,"creators":["Polizzotti, Alex J"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Mechanical Engineering.","school":null,"contributors":[],"advisors":["Tonio Buonassisi."],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016","date_published":"2016","updated_at":"2026-07-22T22:21:42Z","subjects":["Mechanical Engineering."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/103495","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Tonio Buonassisi."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Mechanical Engineering."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. 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High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content"]}]}],"canonical_facts":{"dc:contributor.advisor":["Tonio Buonassisi."],"dc:contributor.department":["Massachusetts Institute of Technology. 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High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements."],"dc:description.degree":["S.M."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/103495"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Mechanical Engineering."],"dc:title":["Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:42Z"}