{"id":{"repo_id":"missouri","oai_identifier":"oai:mospace.umsystem.edu:10355/66756"},"canonical_url":"https://search.dev.ndltd.org/etd/missouri/oai:mospace.umsystem.edu:10355/66756","repository":{"repo_id":"missouri","name":"University of Missouri","base_url":"https://mospace.umsystem.edu/oai/request"},"display":{"title":"Study of nuclear transmutation using cyclotron for post-CMOS activation of Beta emitters","abstract":"[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR'S REQUEST.] A study of post-CMOS fabrication process for radioisotope activation produced by nuclear transmutation is presented. Activation of the precursor occurs by nuclear transmutation and results in the desired beta emitting radioisotope. A microfabricated p-n diode on a silicon substrate coated with specific radioisotope precursors is used as the test basis of study. These results show promise for a broad impact in mass production of post-CMOS devices compatible with a simple radioisotope loading process on fully integrated chips.","abstract_html":"[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR&#x27;S REQUEST.] A study of post-CMOS fabrication process for radioisotope activation produced by nuclear transmutation is presented. Activation of the precursor occurs by nuclear transmutation and results in the desired beta emitting radioisotope. A microfabricated p-n diode on a silicon substrate coated with specific radioisotope precursors is used as the test basis of study. These results show promise for a broad impact in mass production of post-CMOS devices compatible with a simple radioisotope loading process on fully integrated chips.","abstract_has_math":false,"creators":["Barnhart, Benjamin"],"institution":"University of Missouri--Columbia","degree_name":"M.S.","degree_level":"Masters","degree_discipline":"Electrical and computer engineering (MU)","degree_department":null,"school":null,"contributors":[],"advisors":["Kwon, Jae Wan"],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017","date_published":"2017","updated_at":"2026-07-24T03:07:24Z","subjects":[],"languages":["eng","English"],"rights":["Access to files is limited to the University of Missouri--Columbia with SSO login."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10355/66756","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Kwon, Jae Wan"]},{"key":"dc:creator","label":"Author","values":["Barnhart, Benjamin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2018-12-11T20:04:50Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2018-12-11T20:04:50Z"]},{"key":"dc:date.issued","label":"Date","values":["2017"]},{"key":"dc:publisher","label":"Institution","values":["University of Missouri--Columbia"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and computer engineering (MU)"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Columbia"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Access to files is limited to the University of Missouri--Columbia with SSO login."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10355/66756"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Field of study: Electrical engineering.","Dr. Jae W. Kwon, Thesis Supervisor.","\"December 2017.\""]},{"key":"dc:description.abstract","label":"Abstract","values":["[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR'S REQUEST.] A study of post-CMOS fabrication process for radioisotope activation produced by nuclear transmutation is presented. Activation of the precursor occurs by nuclear transmutation and results in the desired beta emitting radioisotope. A microfabricated p-n diode on a silicon substrate coated with specific radioisotope precursors is used as the test basis of study. These results show promise for a broad impact in mass production of post-CMOS devices compatible with a simple radioisotope loading process on fully integrated chips."]},{"key":"dc:source","label":"Dc Source","values":["Submitted by the University of Missouri--Columbia Graduate School."]},{"key":"dc:title","label":"Title","values":["Study of nuclear transmutation using cyclotron for post-CMOS activation of Beta emitters"]}]}],"canonical_facts":{"dc:contributor.advisor":["Kwon, Jae Wan"],"dc:creator":["Barnhart, Benjamin"],"dc:date.accessioned":["2018-12-11T20:04:50Z"],"dc:date.available":["2018-12-11T20:04:50Z"],"dc:date.issued":["2017"],"dc:description":["Field of study: Electrical engineering.","Dr. Jae W. Kwon, Thesis Supervisor.","\"December 2017.\""],"dc:description.abstract":["[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR'S REQUEST.] A study of post-CMOS fabrication process for radioisotope activation produced by nuclear transmutation is presented. Activation of the precursor occurs by nuclear transmutation and results in the desired beta emitting radioisotope. A microfabricated p-n diode on a silicon substrate coated with specific radioisotope precursors is used as the test basis of study. 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