{"id":{"repo_id":"missouri","oai_identifier":"oai:mospace.umsystem.edu:10355/4469"},"canonical_url":"https://search.dev.ndltd.org/etd/missouri/oai:mospace.umsystem.edu:10355/4469","repository":{"repo_id":"missouri","name":"University of Missouri","base_url":"https://mospace.umsystem.edu/oai/request"},"display":{"title":"Silicon carbide as a photoconductive switch material for high power applications","abstract":"This research work discusses the effort at the Electrical and computer engineering (ECE) department at the University of Missouri Columbia (UMC) in developing this technology through simulation and experiments with SiC material. Specifically, the rationale for employing extrinsic photoconductivity, the role of compensation mechanisms have been demonstrated, modeled, and analyzed. The device material fabrication methods and package structures developed to date are discussed. The behavior and the response of the two compensated structures have been discussed in terms of recombination time and optical sensitivity. Material characterization showing agreement with the experimental results was based on choosing the right parameters on trap levels and compensation mechanisms. The experimental switching results with both intrinsic and compensated SiC photo switches using sub-band gap photon energy for code calibration and high power PCSS analysis is presented and compared with semiconductor physics models. The methods used to determine the density and recombination cross section of interband dopants is also presented. A method to improve the hold off voltage of the PCSS by many orders of magnitude is proposed. Laser illumination data with the improved design is also presented.","abstract_html":"This research work discusses the effort at the Electrical and computer engineering (ECE) department at the University of Missouri Columbia (UMC) in developing this technology through simulation and experiments with SiC material. Specifically, the rationale for employing extrinsic photoconductivity, the role of compensation mechanisms have been demonstrated, modeled, and analyzed. The device material fabrication methods and package structures developed to date are discussed. The behavior and the response of the two compensated structures have been discussed in terms of recombination time and optical sensitivity. Material characterization showing agreement with the experimental results was based on choosing the right parameters on trap levels and compensation mechanisms. The experimental switching results with both intrinsic and compensated SiC photo switches using sub-band gap photon energy for code calibration and high power PCSS analysis is presented and compared with semiconductor physics models. The methods used to determine the density and recombination cross section of interband dopants is also presented. A method to improve the hold off voltage of the PCSS by many orders of magnitude is proposed. Laser illumination data with the improved design is also presented.","abstract_has_math":false,"creators":["Kelkar, Kapil S., 1979-"],"institution":"University of Missouri--Columbia","degree_name":"Ph. D.","degree_level":"Doctoral","degree_discipline":"Electrical and computer engineering (MU)","degree_department":null,"school":null,"contributors":[],"advisors":["Islam, Naz E."],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-24T03:08:43Z","subjects":[],"languages":["eng","English"],"rights":["OpenAccess."],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.32469/10355/4469"],"render_values":[{"text":"https://doi.org/10.32469/10355/4469","href":"https://doi.org/10.32469/10355/4469","code":true}]}]},"links":{"outbound_url":"https://hdl.handle.net/10355/4469","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Islam, Naz E."]},{"key":"dc:creator","label":"Author","values":["Kelkar, Kapil S., 1979-"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2010-01-12T17:07:58Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2010-01-12T17:07:58Z"]},{"key":"dc:date.issued","label":"Date","values":["2006"]},{"key":"dc:publisher","label":"Institution","values":["University of Missouri--Columbia"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and computer engineering (MU)"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Columbia"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["OpenAccess."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.32469/10355/4469"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10355/4469"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file.","Title from title screen of research.pdf file (viewed on August 3, 2007)","Vita.","Thesis (Ph. D.) University of Missouri-Columbia 2006."]},{"key":"dc:description.abstract","label":"Abstract","values":["This research work discusses the effort at the Electrical and computer engineering (ECE) department at the University of Missouri Columbia (UMC) in developing this technology through simulation and experiments with SiC material. Specifically, the rationale for employing extrinsic photoconductivity, the role of compensation mechanisms have been demonstrated, modeled, and analyzed. The device material fabrication methods and package structures developed to date are discussed. The behavior and the response of the two compensated structures have been discussed in terms of recombination time and optical sensitivity. Material characterization showing agreement with the experimental results was based on choosing the right parameters on trap levels and compensation mechanisms. The experimental switching results with both intrinsic and compensated SiC photo switches using sub-band gap photon energy for code calibration and high power PCSS analysis is presented and compared with semiconductor physics models. The methods used to determine the density and recombination cross section of interband dopants is also presented. A method to improve the hold off voltage of the PCSS by many orders of magnitude is proposed. Laser illumination data with the improved design is also presented."]},{"key":"dc:title","label":"Title","values":["Silicon carbide as a photoconductive switch material for high power applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Islam, Naz E."],"dc:creator":["Kelkar, Kapil S., 1979-"],"dc:date.accessioned":["2010-01-12T17:07:58Z"],"dc:date.available":["2010-01-12T17:07:58Z"],"dc:date.issued":["2006"],"dc:description":["The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file.","Title from title screen of research.pdf file (viewed on August 3, 2007)","Vita.","Thesis (Ph. D.) University of Missouri-Columbia 2006."],"dc:description.abstract":["This research work discusses the effort at the Electrical and computer engineering (ECE) department at the University of Missouri Columbia (UMC) in developing this technology through simulation and experiments with SiC material. Specifically, the rationale for employing extrinsic photoconductivity, the role of compensation mechanisms have been demonstrated, modeled, and analyzed. The device material fabrication methods and package structures developed to date are discussed. The behavior and the response of the two compensated structures have been discussed in terms of recombination time and optical sensitivity. Material characterization showing agreement with the experimental results was based on choosing the right parameters on trap levels and compensation mechanisms. The experimental switching results with both intrinsic and compensated SiC photo switches using sub-band gap photon energy for code calibration and high power PCSS analysis is presented and compared with semiconductor physics models. The methods used to determine the density and recombination cross section of interband dopants is also presented. A method to improve the hold off voltage of the PCSS by many orders of magnitude is proposed. Laser illumination data with the improved design is also presented."],"dc:identifier.doi":["https://doi.org/10.32469/10355/4469"],"dc:identifier.uri":["https://hdl.handle.net/10355/4469"],"dc:language":["English"],"dc:language.iso":["eng"],"dc:publisher":["University of Missouri--Columbia"],"dc:rights":["OpenAccess."],"dc:title":["Silicon carbide as a photoconductive switch material for high power applications"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and computer engineering (MU)"],"thesis:degree_level":["Doctoral"],"thesis:degree_name":["Ph. D."],"thesis:institution_name":["University of Missouri--Columbia"]},"updated_at":"2026-07-24T03:08:43Z"}