{"id":{"repo_id":"maryland","oai_identifier":"oai:drum.lib.umd.edu:1903/2469"},"canonical_url":"https://search.dev.ndltd.org/etd/maryland/oai:drum.lib.umd.edu:1903/2469","repository":{"repo_id":"maryland","name":"University of Maryland","base_url":"https://api.drum.lib.umd.edu/server/oai/request"},"display":{"title":"Quantitative Materials Contrast at High Spatial Resolution With a Novel Near-Field Scanning Microwave Microscope","abstract":"A novel Near-Field Scanning Microwave Microscope (NSMM) has been developed where a Scanning Tunneling Microscope (STM) is used for tip-to-sample distance control. The technique is non-contact and non-destructive. The same tip is used for both STM and NSMM, and STM helps maintain the tip-to-sample distance at a nominal height of 1 nm. Due to this very small tip-to-sample separation, the contribution to the microwave signals due to evanescent (non-propagating) waves cannot be ignored. I describe different evanescent wave models developed so far to understand the complex tip-to-sample interaction at microwave frequencies. Propagating wave models are also discussed, since they are still required to understand some aspects of the tip-to-sample interaction. Numerical modeling is also discussed for these problems. I demonstrate the sensitivity of this novel microscope to materials property contrast. The materials contrast is shown in spatial variations on the surface of metal thin films, Boron-doped Semiconductor and Colossal Magneto-Resistive (CMR) thin films. The height dependence of the contrast shows sensitivity to nano-meter sized features when the tip-to-sample separation is below 100 nm. By adding a cone of height 4 nm to the tip, I am able to explain a 300 kHz deviation observed in the frequency shift signal, when tip-to-sample separation is less than 10 nm. In the absence of the cone, the frequency shift signal should continue to show the logarithmic behavior as a function of height. I demonstrate sub-micron spatial resolution with this novel microscope, both in tip-to-sample capacitance Cx and materials contrast in sheet resistance Rx. The spatial resolution in Cx is demonstrated to be at-least 2.5 nm on CMR thin films. The spatial resolution in Rx is shown to be sub-micron by measuring a variably Boron-doped Silicon sample which was prepared using the Focus Ion Beam (FIB) technique.","abstract_html":"A novel Near-Field Scanning Microwave Microscope (NSMM) has been developed where a Scanning Tunneling Microscope (STM) is used for tip-to-sample distance control. The technique is non-contact and non-destructive. The same tip is used for both STM and NSMM, and STM helps maintain the tip-to-sample distance at a nominal height of 1 nm. Due to this very small tip-to-sample separation, the contribution to the microwave signals due to evanescent (non-propagating) waves cannot be ignored. I describe different evanescent wave models developed so far to understand the complex tip-to-sample interaction at microwave frequencies. Propagating wave models are also discussed, since they are still required to understand some aspects of the tip-to-sample interaction. Numerical modeling is also discussed for these problems. I demonstrate the sensitivity of this novel microscope to materials property contrast. The materials contrast is shown in spatial variations on the surface of metal thin films, Boron-doped Semiconductor and Colossal Magneto-Resistive (CMR) thin films. The height dependence of the contrast shows sensitivity to nano-meter sized features when the tip-to-sample separation is below 100 nm. By adding a cone of height 4 nm to the tip, I am able to explain a 300 kHz deviation observed in the frequency shift signal, when tip-to-sample separation is less than 10 nm. In the absence of the cone, the frequency shift signal should continue to show the logarithmic behavior as a function of height. I demonstrate sub-micron spatial resolution with this novel microscope, both in tip-to-sample capacitance Cx and materials contrast in sheet resistance Rx. The spatial resolution in Cx is demonstrated to be at-least 2.5 nm on CMR thin films. The spatial resolution in Rx is shown to be sub-micron by measuring a variably Boron-doped Silicon sample which was prepared using the Focus Ion Beam (FIB) technique.","abstract_has_math":false,"creators":["Imtiaz, Atif"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Physics","school":null,"contributors":[],"advisors":["Anlage, Steven M"],"committee_chairs":[],"committee_members":[],"year":2005,"date_issued":"2005-04-21","date_published":"2005-04-21","updated_at":"2026-07-24T03:02:18Z","subjects":[],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1903/2469","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Anlage, Steven M"]},{"key":"dc:contributor.department","label":"Department","values":["Physics"]},{"key":"dc:creator","label":"Author","values":["Imtiaz, Atif"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2005-08-03T14:19:51Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2005-08-03T14:19:51Z"]},{"key":"dc:date.issued","label":"Date","values":["2005-04-21"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1903/2469"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A novel Near-Field Scanning Microwave Microscope (NSMM) has been developed where a Scanning Tunneling Microscope (STM) is used for tip-to-sample distance control. The technique is non-contact and non-destructive. The same tip is used for both STM and NSMM, and STM helps maintain the tip-to-sample distance at a nominal height of 1 nm. Due to this very small tip-to-sample separation, the contribution to the microwave signals due to evanescent (non-propagating) waves cannot be ignored. I describe different evanescent wave models developed so far to understand the complex tip-to-sample interaction at microwave frequencies. Propagating wave models are also discussed, since they are still required to understand some aspects of the tip-to-sample interaction. Numerical modeling is also discussed for these problems. I demonstrate the sensitivity of this novel microscope to materials property contrast. The materials contrast is shown in spatial variations on the surface of metal thin films, Boron-doped Semiconductor and Colossal Magneto-Resistive (CMR) thin films. The height dependence of the contrast shows sensitivity to nano-meter sized features when the tip-to-sample separation is below 100 nm. By adding a cone of height 4 nm to the tip, I am able to explain a 300 kHz deviation observed in the frequency shift signal, when tip-to-sample separation is less than 10 nm. In the absence of the cone, the frequency shift signal should continue to show the logarithmic behavior as a function of height. I demonstrate sub-micron spatial resolution with this novel microscope, both in tip-to-sample capacitance Cx and materials contrast in sheet resistance Rx. The spatial resolution in Cx is demonstrated to be at-least 2.5 nm on CMR thin films. The spatial resolution in Rx is shown to be sub-micron by measuring a variably Boron-doped Silicon sample which was prepared using the Focus Ion Beam (FIB) technique."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Quantitative Materials Contrast at High Spatial Resolution With a Novel Near-Field Scanning Microwave Microscope"]}]}],"canonical_facts":{"dc:contributor.advisor":["Anlage, Steven M"],"dc:contributor.department":["Physics"],"dc:creator":["Imtiaz, Atif"],"dc:date.accessioned":["2005-08-03T14:19:51Z"],"dc:date.available":["2005-08-03T14:19:51Z"],"dc:date.issued":["2005-04-21"],"dc:description.abstract":["A novel Near-Field Scanning Microwave Microscope (NSMM) has been developed where a Scanning Tunneling Microscope (STM) is used for tip-to-sample distance control. The technique is non-contact and non-destructive. The same tip is used for both STM and NSMM, and STM helps maintain the tip-to-sample distance at a nominal height of 1 nm. Due to this very small tip-to-sample separation, the contribution to the microwave signals due to evanescent (non-propagating) waves cannot be ignored. I describe different evanescent wave models developed so far to understand the complex tip-to-sample interaction at microwave frequencies. Propagating wave models are also discussed, since they are still required to understand some aspects of the tip-to-sample interaction. Numerical modeling is also discussed for these problems. I demonstrate the sensitivity of this novel microscope to materials property contrast. The materials contrast is shown in spatial variations on the surface of metal thin films, Boron-doped Semiconductor and Colossal Magneto-Resistive (CMR) thin films. The height dependence of the contrast shows sensitivity to nano-meter sized features when the tip-to-sample separation is below 100 nm. By adding a cone of height 4 nm to the tip, I am able to explain a 300 kHz deviation observed in the frequency shift signal, when tip-to-sample separation is less than 10 nm. In the absence of the cone, the frequency shift signal should continue to show the logarithmic behavior as a function of height. I demonstrate sub-micron spatial resolution with this novel microscope, both in tip-to-sample capacitance Cx and materials contrast in sheet resistance Rx. The spatial resolution in Cx is demonstrated to be at-least 2.5 nm on CMR thin films. The spatial resolution in Rx is shown to be sub-micron by measuring a variably Boron-doped Silicon sample which was prepared using the Focus Ion Beam (FIB) technique."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1903/2469"],"dc:language.iso":["en_US"],"dc:title":["Quantitative Materials Contrast at High Spatial Resolution With a Novel Near-Field Scanning Microwave Microscope"],"dc:type":["Dissertation"]},"updated_at":"2026-07-24T03:02:18Z"}