Development and Scaling up of Oxide Buffer Architectures on Flexible Substrates for Efficient and Application-Derived Growth of REBCO Thin Films
type: CreativeWork
description: High-performance REBCO film growth on low-cost, flexible, and scalable metallic substrates is sought for many applications requiring high critical current densities (Jc) with operability over a wide range of magnetic fields of 0–20 T and temperatures of 4.2–77 K. In addition, the growth of high-quality REBCO films on low-cost, flexible, dielectric, and nonmetallic substrates is needed for use in high-frequency applications because of their low surface resistivity, high-quality factor (Q-factor), and low signal-to-noise ratio (SNR), which are essential for ensuring high-quality signal transmission. This study aims to improve the Jc and processing efficiency of REBCO to support the fabrication of 5-μm-thick film REBCO tapes using advanced metal organic chemical vapor deposition (A-MOCVD), with three times the critical current of commercial REBCO tapes in high magnetic fields at 4.2–20 K, and more than four times the precursor-to-film conversion efficiency of conventional MOCVD (approximately 45%). Single crystalline-like REBCO thin films are enabled through the growth of biaxially-textured oxide buffer films based on the state-of-the-art ion beam-assisted deposition (IBAD) of thin MgO templates. In this study, a novel approach was developed to grow double-sided oxide buffer to facilitate the growth of double-sided REBCO films thicker than 3 μm on each side so as to improve the engineering current density (Je). The double-sided buffer stack was grown on 50-μm-thick in-house electropolished Hastelloy tape. This tape, which has an average surface roughness (Ra) of <1 nm, was selected for its good thermal and chemical compatibility. The buffer stack consisted of a 240-nm-thick amorphous alumina (diffusion barrier) deposited by magnetron reactive sputtering, followed by an 8-nm-thick amorphous yttria (seed layer) and a 10-nm-thick IBAD MgO using the IBAD process. Subsequently, Homo-epi MgO and LaMnO3 were optimized using reactive mid- and radio frequency (RF) magnetron spu…
abstract: High-performance REBCO film growth on low-cost, flexible, and scalable metallic substrates is sought for many applications requiring high critical current densities (Jc) with operability over a wide range of magnetic fields of 0–20 T and temperatures of 4.2–77 K. In addition, the growth of high-quality REBCO films on low-cost, flexible, dielectric, and nonmetallic substrates is needed for use in high-frequency applications because of their low surface resistivity, high-quality factor (Q-factor), and low signal-to-noise ratio (SNR), which are essential for ensuring high-quality signal transmission. This study aims to improve the Jc and processing efficiency of REBCO to support the fabrication of 5-μm-thick film REBCO tapes using advanced metal organic chemical vapor deposition (A-MOCVD), with three times the critical current of commercial REBCO tapes in high magnetic fields at 4.2–20 K, and more than four times the precursor-to-film conversion efficiency of conventional MOCVD (approximately 45%). Single crystalline-like REBCO thin films are enabled through the growth of biaxially-textured oxide buffer films based on the state-of-the-art ion beam-assisted deposition (IBAD) of thin MgO templates. In this study, a novel approach was developed to grow double-sided oxide buffer to facilitate the growth of double-sided REBCO films thicker than 3 μm on each side so as to improve the engineering current density (Je). The double-sided buffer stack was grown on 50-μm-thick in-house electropolished Hastelloy tape. This tape, which has an average surface roughness (Ra) of <1 nm, was selected for its good thermal and chemical compatibility. The buffer stack consisted of a 240-nm-thick amorphous alumina (diffusion barrier) deposited by magnetron reactive sputtering, followed by an 8-nm-thick amorphous yttria (seed layer) and a 10-nm-thick IBAD MgO using the IBAD process. Subsequently, Homo-epi MgO and LaMnO3 were optimized using reactive mid- and radio frequency (RF) magnetron spu…
author: Sandra, Jithin Sai
keywords: REBCO, Double-sided, Oxide buffer layers, Flexible YSZ.
date published: 2024-05-09
date modified: 2026-07-24T02:32:34Z
provider: University of Houston
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Houston

PropertyValue
property ID: Handle
value: https://hdl.handle.net/10657/17787