ΕΝΑΠΟΘΕΣΗ ΑΜΟΡΦΟΥ ΥΔΡΟΝΩΜΕΝΟΥ ΠΥΡΙΤΙΟΥ ΣΤΗΝ ΕΚΚΕΝΩΣΗ ΑΙΓΛΗΣ ΤΟΥ ΣΙΛΑΝΙΟΥ. ΡΟΛΟΣΤΩΝ ΕΝΕΡΓΩΝ ΕΝΔΙΑΜΕΣΩΝ

IN THIS WORK WE EXAMINE THE PROCESS OF PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FOR HIGH EFFICIENCY SOLAR CELLS. NAMELY, OUR EFFORT IS TO CORRELATE MACROSCOPIC DEPOSITION PARAMETERS WITH MICROSCOPIC PLASMA PARAMETERS AND THE DEPOSITED FILM CHARACTERISTICS. FOR THIS PURPOSE WE USELASER INDUCED FLUORESCENCE AND SPATIALLY RESOLVED EMISSION SPECTROSCOPIES FOR RECORDING THE CONCENTRATION AND SPACE - DISTRIBUTION OF ACTIVE INTERMEDIATES, THAT PARTICIPATE TO THE FILM GROWTH, DURING THE DEPOSITION. IN THIS MANNER WE EXAMINE THE INFLUENCE VARIOUS DEPOSITION PARAMETERS, SUCH AS PRESSURE, POWER FLOW, DISCHARGE GEOMETRY AND BUFFER-GAS DILUTION TO THE CONCENTRATION AND SPACE DISTRIBUTION OF SIH AND ELECTRONICALLY EXCITED SIH* RADICALS SIMULTANEOUSLY. THE RESULTS ARE CORRELATED WITH THE FILM CHARACTERISTICS SUCH AS DEPOSITION RATE, ABSORPTION, DARK AND PHOTO-CONDUCTIVITY, AND THEY ARE USED AS DATA SOURCE FOR THEREALISTIC SIMULATION OF THE PROCESS. THUS, A SERIES OF DATA AND MEASUREMENTS CONCERNING THE GAS-PHASE COMPOSITION, THE ROLE OF THESE ACTIVE INTERMEDIATES, AND THE DEPOSITION MECHANISM, HAVE BEEN PRESENTED FOR THE FIRST TIME. OUR EFFORT TO CORRELATE THESE OBSERVATIONS WITH THE FILM CHARACTERISTICS CAN GIVE NEW POSSIBILITIES FOR UNDERSTANDING AND CONTROL OF THE DEPOSITION PROCESS.

Grantor dc:publisher

University of Patras

Year dc:date

1990

Author dc:creator

• Ματαράς, Δημήτριος

• Άμορφο υδρογονωμένο πυρίτιο (Α-SI:H)
• ΕΚΚΕΝΩΣΗ ΑΙΓΛΗΣ ΤΟΥ ΣΙΛΑΝΙΟΥ
• ΠΛΑΣΜΑ ΧΑΜΗΛΗΣ ΠΙΕΣΗΣ
• ΦΑΣΜΑΤΟΣΚΟΠΙΑ ΕΚΠΟΜΠΗΣ
• ΦΑΣΜΑΤΟΣΚΟΠΙΑ ΦΘΟΡΙΣΜΟΥ ΜΕ LASER
• Φωτοβολταϊκά στοιχεία
• ΧΗΜΕΙΑ ΤΗΣ ΕΚΚΕΝΩΣΗΣ ΑΙΓΛΗΣ ΤΟΥ ΣΙΛΑΝΙΟΥ
• AMORPHOUS HYDROGENATED SILICON CA-SI:HJ
• EMISSION SPECTROSCOPY
• Laser induced fluorescence spectroscopy
• LOW-PRESSURE PLASMA
• Plasma enhanced chemical vapor deposition
• SILANE GLOW DISCHARGE
• Solar cells
• Επιστήμες Μηχανικού και Τεχνολογία
• Επιστήμη Χημικού Μηχανικού
• Engineering and Technology
• Chemical Engineering

Language dc:language

gre

Identifier

10.12681/eadd/1408

OAI identifier oai:identifier

oai:10442/1408