Οπτικές ιδιότητες του αραιού μαγνητικού ημιαγωγού Ζn₁₋ₓΜnₓS
type: CreativeWork
description: In this thesis, a systematic Raman and luminescence study of the diluted magnetic semiconductor Ζn₁₋ₓΜnₓS has been carried out for concentrations x=0.03-0.5. The effects on the spectra of high-low temperature (T=20-1300K), hydrostatic pressure (p=0-5 GPa), and the excitation wavelength (λ=3507-6764 A) have been examined in detail. Based on the luminescence spectra the dependence of the emission bands on the external parameters has been delineated. Besides, the characteristic phase transition that appears at high hydrostatic pressures has been studied for all concentrations. The Raman spectra have supplied the optical phonon frequencies of the lattice and the impurity induced modes. From the concentration dependence of the optical modes, an 'one-mode' behavior has been established. By applying the configuration coordinate model, the lattice properties have been related to the electronic transitions and the parameters of the model have been induced. It was demonstrated that the optical transitions are coupled only to the impurity induced modes.
abstract: In this thesis, a systematic Raman and luminescence study of the diluted magnetic semiconductor Ζn₁₋ₓΜnₓS has been carried out for concentrations x=0.03-0.5. The effects on the spectra of high-low temperature (T=20-1300K), hydrostatic pressure (p=0-5 GPa), and the excitation wavelength (λ=3507-6764 A) have been examined in detail. Based on the luminescence spectra the dependence of the emission bands on the external parameters has been delineated. Besides, the characteristic phase transition that appears at high hydrostatic pressures has been studied for all concentrations. The Raman spectra have supplied the optical phonon frequencies of the lattice and the impurity induced modes. From the concentration dependence of the optical modes, an 'one-mode' behavior has been established. By applying the configuration coordinate model, the lattice properties have been related to the electronic transitions and the parameters of the model have been induced. It was demonstrated that the optical transitions are coupled only to the impurity induced modes.
author: Anastassiadou, Anastasia
author: Αναστασιάδου, Αναστασία
language: gre
keywords: Ημιαγωγοί, Μαγνητικά υλικά, Οπτική, Σκέδαση Raman, Φωταύγεια, Luminescence, Optical, Raman scattering, Semiconductor, Semimagnetic materials, Φυσικές Επιστήμες, Φυσική, Natural Sciences, Physical Sciences
date published: 1990
date modified: 2026-07-24T02:24:52Z
provider: Greek National Archive of PhD Theses
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: National Technical University of Athens (NTUA)

PropertyValue
property ID: DOI
value: 10.12681/eadd/1364

PropertyValue
property ID: Handle
value: http://hdl.handle.net/10442/hedi/1364