{"id":{"repo_id":"ghent","oai_identifier":"oai:archive.ugent.be:468918"},"canonical_url":"https://search.dev.ndltd.org/etd/ghent/oai:archive.ugent.be:468918","repository":{"repo_id":"ghent","name":"Ghent University","base_url":"https://biblio.ugent.be/oai"},"display":{"title":"biaxial alignment in sputter deposited thin films","abstract":"Thin films which exhibit a preferential out-of-plane orientation as well as a preferential in-plane orientation are called biaxially aligned. In this work, a magnetron is used to deposit such biaxially aligned and to investigate the underlying mechanism. Understanding the biaxial alignment mechanism, at first compels to understand the development of a preferential out-of-plane orientation. Depending on which of the basic structure forming phenomena can occur, a preferential out-of-plane orientation may develop in an evolutionary way or in a re-structurative way. It is generally accepted that in case of an evolutionary out-of-plane alignment, the crystallographic plane offering the lowest surface mobility to the ad-particles will become the resulting preferential orientation. It is shown that the crystallographic plane which offers the lowest mobility depends on the condition of the reactive gas and on the state of the metallic ad-particles. On the other hand, if the out-of-plane alignment occurs in a re-structurative way, the crystallographic plane with lowest surface energy becomes the resulting preferential orientation. In case that the out-of-plane alignment develops in an evolutionary way, an in-plane alignment can be obtained by tilting the substrate with respect to the material flux. A model for the development of this in-plane alignment is proposed. Basically, the in-plane alignment is a result of a growth rate anisotropy caused by an in-plane orientation dependent material capture length. This material capture length depends on the in-plane orientation since all grains grow according to their kinetically limited growth shape, and because of the directional diffusion of the ad-particles. It is shown that the degree of in-plane alignment is limited by the angular spread on the incoming material flux. Simulating the transport of the sputtered particles through the gas phase, results in the knowledge of this angular spread. Hence, the influence of several deposition parameters on the degree of in-plane alignment could be understood.","abstract_html":"Thin films which exhibit a preferential out-of-plane orientation as well as a preferential in-plane orientation are called biaxially aligned. In this work, a magnetron is used to deposit such biaxially aligned and to investigate the underlying mechanism. Understanding the biaxial alignment mechanism, at first compels to understand the development of a preferential out-of-plane orientation. Depending on which of the basic structure forming phenomena can occur, a preferential out-of-plane orientation may develop in an evolutionary way or in a re-structurative way. It is generally accepted that in case of an evolutionary out-of-plane alignment, the crystallographic plane offering the lowest surface mobility to the ad-particles will become the resulting preferential orientation. It is shown that the crystallographic plane which offers the lowest mobility depends on the condition of the reactive gas and on the state of the metallic ad-particles. On the other hand, if the out-of-plane alignment occurs in a re-structurative way, the crystallographic plane with lowest surface energy becomes the resulting preferential orientation. In case that the out-of-plane alignment develops in an evolutionary way, an in-plane alignment can be obtained by tilting the substrate with respect to the material flux. A model for the development of this in-plane alignment is proposed. Basically, the in-plane alignment is a result of a growth rate anisotropy caused by an in-plane orientation dependent material capture length. This material capture length depends on the in-plane orientation since all grains grow according to their kinetically limited growth shape, and because of the directional diffusion of the ad-particles. It is shown that the degree of in-plane alignment is limited by the angular spread on the incoming material flux. Simulating the transport of the sputtered particles through the gas phase, results in the knowledge of this angular spread. Hence, the influence of several deposition parameters on the degree of in-plane alignment could be understood.","abstract_has_math":false,"creators":["Mahieu, Stijn"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["De Gryse, R"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-24T02:22:57Z","subjects":[],"languages":["und"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://biblio.ugent.be/publication/468918","http://doi.org/1854/4836","https://biblio.ugent.be/publication/468918/file/1878143"],"render_values":[{"text":"https://biblio.ugent.be/publication/468918","href":"https://biblio.ugent.be/publication/468918","code":true},{"text":"http://doi.org/1854/4836","href":"http://doi.org/1854/4836","code":true},{"text":"https://biblio.ugent.be/publication/468918/file/1878143","href":"https://biblio.ugent.be/publication/468918/file/1878143","code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/1854/LU-468918","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["De Gryse, R"]},{"key":"dc:creator","label":"Author","values":["Mahieu, Stijn"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2006"]},{"key":"dc:type","label":"Dc Type","values":["dissertation","info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["und"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://biblio.ugent.be/publication/468918","http://hdl.handle.net/1854/LU-468918","http://doi.org/1854/4836","https://biblio.ugent.be/publication/468918/file/1878143"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thin films which exhibit a preferential out-of-plane orientation as well as a preferential in-plane orientation are called biaxially aligned. In this work, a magnetron is used to deposit such biaxially aligned and to investigate the underlying mechanism. Understanding the biaxial alignment mechanism, at first compels to understand the development of a preferential out-of-plane orientation. Depending on which of the basic structure forming phenomena can occur, a preferential out-of-plane orientation may develop in an evolutionary way or in a re-structurative way. It is generally accepted that in case of an evolutionary out-of-plane alignment, the crystallographic plane offering the lowest surface mobility to the ad-particles will become the resulting preferential orientation. It is shown that the crystallographic plane which offers the lowest mobility depends on the condition of the reactive gas and on the state of the metallic ad-particles. On the other hand, if the out-of-plane alignment occurs in a re-structurative way, the crystallographic plane with lowest surface energy becomes the resulting preferential orientation. In case that the out-of-plane alignment develops in an evolutionary way, an in-plane alignment can be obtained by tilting the substrate with respect to the material flux. A model for the development of this in-plane alignment is proposed. Basically, the in-plane alignment is a result of a growth rate anisotropy caused by an in-plane orientation dependent material capture length. This material capture length depends on the in-plane orientation since all grains grow according to their kinetically limited growth shape, and because of the directional diffusion of the ad-particles. It is shown that the degree of in-plane alignment is limited by the angular spread on the incoming material flux. Simulating the transport of the sputtered particles through the gas phase, results in the knowledge of this angular spread. Hence, the influence of several deposition parameters on the degree of in-plane alignment could be understood."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["biaxial alignment in sputter deposited thin films"]}]}],"canonical_facts":{"dc:contributor":["De Gryse, R"],"dc:creator":["Mahieu, Stijn"],"dc:date":["2006"],"dc:description":["Thin films which exhibit a preferential out-of-plane orientation as well as a preferential in-plane orientation are called biaxially aligned. In this work, a magnetron is used to deposit such biaxially aligned and to investigate the underlying mechanism. Understanding the biaxial alignment mechanism, at first compels to understand the development of a preferential out-of-plane orientation. Depending on which of the basic structure forming phenomena can occur, a preferential out-of-plane orientation may develop in an evolutionary way or in a re-structurative way. It is generally accepted that in case of an evolutionary out-of-plane alignment, the crystallographic plane offering the lowest surface mobility to the ad-particles will become the resulting preferential orientation. It is shown that the crystallographic plane which offers the lowest mobility depends on the condition of the reactive gas and on the state of the metallic ad-particles. On the other hand, if the out-of-plane alignment occurs in a re-structurative way, the crystallographic plane with lowest surface energy becomes the resulting preferential orientation. In case that the out-of-plane alignment develops in an evolutionary way, an in-plane alignment can be obtained by tilting the substrate with respect to the material flux. A model for the development of this in-plane alignment is proposed. Basically, the in-plane alignment is a result of a growth rate anisotropy caused by an in-plane orientation dependent material capture length. This material capture length depends on the in-plane orientation since all grains grow according to their kinetically limited growth shape, and because of the directional diffusion of the ad-particles. It is shown that the degree of in-plane alignment is limited by the angular spread on the incoming material flux. Simulating the transport of the sputtered particles through the gas phase, results in the knowledge of this angular spread. Hence, the influence of several deposition parameters on the degree of in-plane alignment could be understood."],"dc:format":["application/pdf"],"dc:identifier":["https://biblio.ugent.be/publication/468918","http://hdl.handle.net/1854/LU-468918","http://doi.org/1854/4836","https://biblio.ugent.be/publication/468918/file/1878143"],"dc:language":["und"],"dc:rights":["info:eu-repo/semantics/openAccess"],"dc:title":["biaxial alignment in sputter deposited thin films"],"dc:type":["dissertation","info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]},"updated_at":"2026-07-24T02:22:57Z"}