{"id":{"repo_id":"gatech","oai_identifier":"oai:repository.gatech.edu:1853/72657"},"canonical_url":"https://search.dev.ndltd.org/etd/gatech/oai:repository.gatech.edu:1853/72657","repository":{"repo_id":"gatech","name":"Georgia Tech","base_url":"https://repository.gatech.edu/server/oai/request"},"display":{"title":"ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films","abstract":"The objective of this thesis is to introduce several advances into ultra-thin aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the ultra-thin piezoelectric films targeted for mobile filtering application toward the 5th generation (5G) millimeter wave bands. We approach our design considering the limitations of filter bandwidth and super high-frequency operation by marrying the advantages of highly-crystalline thin films with the piezoelectric boost from the addition of Sc to AlN alloys. This results in single-crystalline epitaxial AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future directions to fulfill the requirements for the compact radio frequency front-end (RFFE) filters towards the mm-wave frequency range.","abstract_html":"The objective of this thesis is to introduce several advances into ultra-thin aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the ultra-thin piezoelectric films targeted for mobile filtering application toward the 5th generation (5G) millimeter wave bands. We approach our design considering the limitations of filter bandwidth and super high-frequency operation by marrying the advantages of highly-crystalline thin films with the piezoelectric boost from the addition of Sc to AlN alloys. This results in single-crystalline epitaxial AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future directions to fulfill the requirements for the compact radio frequency front-end (RFFE) filters towards the mm-wave frequency range.","abstract_has_math":false,"creators":["Park, Mingyo"],"institution":"Georgia Institute of Technology","degree_name":null,"degree_level":"Doctoral","degree_discipline":null,"degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":["Ansari, Azadeh"],"committee_chairs":[],"committee_members":["Ayazi, Farrokh","Cressler, John D.","Choi, Sukwon","Brand, Oliver"],"year":2022,"date_issued":"2022-08-26","date_published":"2022-08-26","updated_at":"2026-07-27T19:51:32Z","subjects":["acoustic resonator/filter","microelectromechanical system","aluminum nitride","aluminum scandium nitride","surface acoustic resonator","thin-film bulk acoustic resonator","Lambwave resonator."],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1853/72657","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Ansari, Azadeh"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Ayazi, Farrokh","Cressler, John D.","Choi, Sukwon","Brand, Oliver"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Park, Mingyo"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2023-09-06T19:46:13Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2023-09-06T19:46:13Z"]},{"key":"dc:date.issued","label":"Date","values":["2022-08-26"]},{"key":"dc:publisher","label":"Institution","values":["Georgia Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["acoustic resonator/filter","microelectromechanical system","aluminum nitride","aluminum scandium nitride","surface acoustic resonator","thin-film bulk acoustic resonator","Lambwave resonator."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1853/72657"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The objective of this thesis is to introduce several advances into ultra-thin aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the ultra-thin piezoelectric films targeted for mobile filtering application toward the 5th generation (5G) millimeter wave bands. We approach our design considering the limitations of filter bandwidth and super high-frequency operation by marrying the advantages of highly-crystalline thin films with the piezoelectric boost from the addition of Sc to AlN alloys. This results in single-crystalline epitaxial AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future directions to fulfill the requirements for the compact radio frequency front-end (RFFE) filters towards the mm-wave frequency range."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films"]}]}],"canonical_facts":{"dc:contributor.advisor":["Ansari, Azadeh"],"dc:contributor.committeemember":["Ayazi, Farrokh","Cressler, John D.","Choi, Sukwon","Brand, Oliver"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Park, Mingyo"],"dc:date.accessioned":["2023-09-06T19:46:13Z"],"dc:date.available":["2023-09-06T19:46:13Z"],"dc:date.issued":["2022-08-26"],"dc:description.abstract":["The objective of this thesis is to introduce several advances into ultra-thin aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the ultra-thin piezoelectric films targeted for mobile filtering application toward the 5th generation (5G) millimeter wave bands. We approach our design considering the limitations of filter bandwidth and super high-frequency operation by marrying the advantages of highly-crystalline thin films with the piezoelectric boost from the addition of Sc to AlN alloys. This results in single-crystalline epitaxial AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future directions to fulfill the requirements for the compact radio frequency front-end (RFFE) filters towards the mm-wave frequency range."],"dc:description.degree":["Ph.D."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["https://hdl.handle.net/1853/72657"],"dc:language.iso":["en_US"],"dc:publisher":["Georgia Institute of Technology"],"dc:subject":["acoustic resonator/filter","microelectromechanical system","aluminum nitride","aluminum scandium nitride","surface acoustic resonator","thin-film bulk acoustic resonator","Lambwave resonator."],"dc:title":["ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films"],"dc:type":["Text"],"thesis:degree_level":["Doctoral"]},"updated_at":"2026-07-27T19:51:32Z"}