{"id":{"repo_id":"gatech","oai_identifier":"oai:repository.gatech.edu:1853/66159"},"canonical_url":"https://search.dev.ndltd.org/etd/gatech/oai:repository.gatech.edu:1853/66159","repository":{"repo_id":"gatech","name":"Georgia Tech","base_url":"https://repository.gatech.edu/server/oai/request"},"display":{"title":"The Edge States of Epitaxial Graphene on SiC","abstract":"Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices.","abstract_html":"Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices.","abstract_has_math":false,"creators":["Hu, Yue"],"institution":"Georgia Institute of Technology","degree_name":null,"degree_level":"Doctoral","degree_discipline":null,"degree_department":"Physics","school":null,"contributors":[],"advisors":["de Heer, Walter A."],"committee_chairs":[],"committee_members":["Jiang, Zhigang","First, Phillip","Mourigal, Martin","Khan, Asif"],"year":2021,"date_issued":"2021-12-14","date_published":"2021-12-14","updated_at":"2026-07-27T19:49:34Z","subjects":["Graphene, Epitaxial Graphene, Semiconductor, Graphene Nanoribbon, Electrical Transport"],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1853/66159","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["de Heer, Walter A."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Jiang, Zhigang","First, Phillip","Mourigal, Martin","Khan, Asif"]},{"key":"dc:contributor.department","label":"Department","values":["Physics"]},{"key":"dc:creator","label":"Author","values":["Hu, Yue"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2022-01-14T16:12:43Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2022-01-14T16:12:43Z"]},{"key":"dc:date.issued","label":"Date","values":["2021-12-14"]},{"key":"dc:publisher","label":"Institution","values":["Georgia Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Graphene, Epitaxial Graphene, Semiconductor, Graphene Nanoribbon, Electrical Transport"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1853/66159"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["The Edge States of Epitaxial Graphene on SiC"]}]}],"canonical_facts":{"dc:contributor.advisor":["de Heer, Walter A."],"dc:contributor.committeemember":["Jiang, Zhigang","First, Phillip","Mourigal, Martin","Khan, Asif"],"dc:contributor.department":["Physics"],"dc:creator":["Hu, Yue"],"dc:date.accessioned":["2022-01-14T16:12:43Z"],"dc:date.available":["2022-01-14T16:12:43Z"],"dc:date.issued":["2021-12-14"],"dc:description.abstract":["Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices."],"dc:description.degree":["Ph.D."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1853/66159"],"dc:language.iso":["en_US"],"dc:publisher":["Georgia Institute of Technology"],"dc:subject":["Graphene, Epitaxial Graphene, Semiconductor, Graphene Nanoribbon, Electrical Transport"],"dc:title":["The Edge States of Epitaxial Graphene on SiC"],"dc:type":["Text"],"thesis:degree_level":["Doctoral"]},"updated_at":"2026-07-27T19:49:34Z"}