{"id":{"repo_id":"gatech","oai_identifier":"oai:repository.gatech.edu:1853/61659"},"canonical_url":"https://search.dev.ndltd.org/etd/gatech/oai:repository.gatech.edu:1853/61659","repository":{"repo_id":"gatech","name":"Georgia Tech","base_url":"https://repository.gatech.edu/server/oai/request"},"display":{"title":"Design and fabrication of nitride-based solar cells and integration for tandem cell","abstract":"A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost and high efficiency photovoltaic applications.","abstract_html":"A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost and high efficiency photovoltaic applications.","abstract_has_math":false,"creators":["Ayari, Taha"],"institution":"Georgia Institute of Technology","degree_name":null,"degree_level":"Doctoral","degree_discipline":null,"degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":["Ougazzaden, Abdallah","Salvestrini, Jean-Paul"],"committee_chairs":[],"committee_members":["Voss, Paul","Adibi, Ali","Sanders, Thomas"],"year":2018,"date_issued":"2018-07-26","date_published":"2018-07-26","updated_at":"2026-07-27T19:49:57Z","subjects":["InGaN solar cell","Hybrid integration"],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1853/61659","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Ougazzaden, Abdallah","Salvestrini, Jean-Paul"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Voss, Paul","Adibi, Ali","Sanders, Thomas"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Ayari, Taha"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2019-08-21T13:49:59Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2019-08-21T13:49:59Z"]},{"key":"dc:date.issued","label":"Date","values":["2018-07-26"]},{"key":"dc:publisher","label":"Institution","values":["Georgia Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["InGaN solar cell","Hybrid integration"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1853/61659"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost and high efficiency photovoltaic applications."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Design and fabrication of nitride-based solar cells and integration for tandem cell"]}]}],"canonical_facts":{"dc:contributor.advisor":["Ougazzaden, Abdallah","Salvestrini, Jean-Paul"],"dc:contributor.committeemember":["Voss, Paul","Adibi, Ali","Sanders, Thomas"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Ayari, Taha"],"dc:date.accessioned":["2019-08-21T13:49:59Z"],"dc:date.available":["2019-08-21T13:49:59Z"],"dc:date.issued":["2018-07-26"],"dc:description.abstract":["A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost and high efficiency photovoltaic applications."],"dc:description.degree":["Ph.D."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1853/61659"],"dc:language.iso":["en_US"],"dc:publisher":["Georgia Institute of Technology"],"dc:subject":["InGaN solar cell","Hybrid integration"],"dc:title":["Design and fabrication of nitride-based solar cells and integration for tandem cell"],"dc:type":["Text"],"thesis:degree_level":["Doctoral"]},"updated_at":"2026-07-27T19:49:57Z"}