{"id":{"repo_id":"gatech","oai_identifier":"oai:repository.gatech.edu:1853/42836"},"canonical_url":"https://search.dev.ndltd.org/etd/gatech/oai:repository.gatech.edu:1853/42836","repository":{"repo_id":"gatech","name":"Georgia Tech","base_url":"https://repository.gatech.edu/server/oai/request"},"display":{"title":"Reliability of SiGe HBTs for extreme environment and RF applications","abstract":"The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed.","abstract_html":"The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed.","abstract_has_math":false,"creators":["Cheng, Peng"],"institution":"Georgia Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":["Cressler, John D."],"committee_chairs":[],"committee_members":["Chen, Xu-Yan","Milor, Linda","Papapolymerou, John","Shen, Shyh-Chiang"],"year":2010,"date_issued":"2010-11-17","date_published":"2010-11-17","updated_at":"2026-07-27T19:50:35Z","subjects":["Extreme environment","SiGe HBTs","RF","Power amplifier"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1853/42836","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Cressler, John D."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Chen, Xu-Yan","Milor, Linda","Papapolymerou, John","Shen, Shyh-Chiang"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Cheng, Peng"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2012-02-17T19:21:55Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2012-02-17T19:21:55Z"]},{"key":"dc:date.issued","label":"Date","values":["2010-11-17"]},{"key":"dc:publisher","label":"Institution","values":["Georgia Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Text"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Extreme environment","SiGe HBTs","RF","Power amplifier"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1853/42836"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["PhD"]},{"key":"dc:title","label":"Title","values":["Reliability of SiGe HBTs for extreme environment and RF applications"]}]}],"canonical_facts":{"dc:contributor.advisor":["Cressler, John D."],"dc:contributor.committeemember":["Chen, Xu-Yan","Milor, Linda","Papapolymerou, John","Shen, Shyh-Chiang"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Cheng, Peng"],"dc:date.accessioned":["2012-02-17T19:21:55Z"],"dc:date.available":["2012-02-17T19:21:55Z"],"dc:date.issued":["2010-11-17"],"dc:description.abstract":["The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed."],"dc:description.degree":["PhD"],"dc:identifier.uri":["http://hdl.handle.net/1853/42836"],"dc:publisher":["Georgia Institute of Technology"],"dc:subject":["Extreme environment","SiGe HBTs","RF","Power amplifier"],"dc:title":["Reliability of SiGe HBTs for extreme environment and RF applications"],"dc:type":["Text"]},"updated_at":"2026-07-27T19:50:35Z"}