{"id":{"repo_id":"gatech","oai_identifier":"oai:repository.gatech.edu:1853/28206"},"canonical_url":"https://search.dev.ndltd.org/etd/gatech/oai:repository.gatech.edu:1853/28206","repository":{"repo_id":"gatech","name":"Georgia Tech","base_url":"https://repository.gatech.edu/server/oai/request"},"display":{"title":"Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments","abstract":"Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).","abstract_html":"Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).","abstract_has_math":false,"creators":["Bellini, Marco"],"institution":"Georgia Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":["Cressler, John D."],"committee_chairs":[],"committee_members":["Papapolymerou, John","Ralph, Stephen","Shen, Shyh-Chiang","Zhou, Hao Min"],"year":2009,"date_issued":"2009-03-02","date_published":"2009-03-02","updated_at":"2026-07-27T19:50:58Z","subjects":["SiGe","Extreme environments","HBT-on-SOI","Heterojunction bipolar transistor","Silicon germanium","TCAD"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1853/28206","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Cressler, John D."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Papapolymerou, John","Ralph, Stephen","Shen, Shyh-Chiang","Zhou, Hao Min"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Bellini, Marco"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2009-06-08T19:28:23Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2009-06-08T19:28:23Z"]},{"key":"dc:date.issued","label":"Date","values":["2009-03-02"]},{"key":"dc:publisher","label":"Institution","values":["Georgia Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Text"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["SiGe","Extreme environments","HBT-on-SOI","Heterojunction bipolar transistor","Silicon germanium","TCAD"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1853/28206"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset)."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:title","label":"Title","values":["Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments"]}]}],"canonical_facts":{"dc:contributor.advisor":["Cressler, John D."],"dc:contributor.committeemember":["Papapolymerou, John","Ralph, Stephen","Shen, Shyh-Chiang","Zhou, Hao Min"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Bellini, Marco"],"dc:date.accessioned":["2009-06-08T19:28:23Z"],"dc:date.available":["2009-06-08T19:28:23Z"],"dc:date.issued":["2009-03-02"],"dc:description.abstract":["Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset)."],"dc:description.degree":["Ph.D."],"dc:identifier.uri":["http://hdl.handle.net/1853/28206"],"dc:publisher":["Georgia Institute of Technology"],"dc:subject":["SiGe","Extreme environments","HBT-on-SOI","Heterojunction bipolar transistor","Silicon germanium","TCAD"],"dc:title":["Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments"],"dc:type":["Text"]},"updated_at":"2026-07-27T19:50:58Z"}