This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on Vout,Vmos stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.
In all tests and results it was found that SiC MOSFET made a significant improvement in the power efficiency and decreased power loss compared to Si MOSFET. Using SiC MOSFET in Push-Pull and Buck converter increased system efficiency and decreased MOSFET power loss. SiC is more immune against frequency change and performed better than Si MOSFET. Also, replacing Si MOSFET with SiC MOSFET added more voltage stability against the increase in load demand. These results will lead to design power converters with significant power loss and will decrease power dissipation. It will lead to better performance and a smaller circuit package because of the decrease in the heat sink and ventilation fans. It will save the power, decrease the cost and increase converter life time.
","abstract_html":"<p>This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on V<sub>out</sub>,V<sub>mos</sub> stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.</p> <p>In all tests and results it was found that SiC MOSFET made a significant improvement in the power efficiency and decreased power loss compared to Si MOSFET. Using SiC MOSFET in Push-Pull and Buck converter increased system efficiency and decreased MOSFET power loss. SiC is more immune against frequency change and performed better than Si MOSFET. Also, replacing Si MOSFET with SiC MOSFET added more voltage stability against the increase in load demand. These results will lead to design power converters with significant power loss and will decrease power dissipation. It will lead to better performance and a smaller circuit package because of the decrease in the heat sink and ventilation fans. It will save the power, decrease the cost and increase converter life time.</p>","abstract_has_math":false,"creators":["Albadri, Mustafa Nameer"],"institution":null,"degree_name":"M.S.","degree_level":"Masters Thesis","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Mohammad Matin, Ph.D.","Jason Zhang","Jack Donnelly"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-01-01T08:00:00Z","date_published":"2017-01-01T08:00:00Z","updated_at":"2026-07-24T02:02:19Z","subjects":["Buck converter","Push-pull","Silicon carbide","Wide bandgap","Electrical and Computer Engineering"],"languages":["en"],"rights":["Copyright is held by the author. User is responsible for all copyright compliance.
"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.du.edu/etd/1312","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Mohammad Matin, Ph.D.","Jason Zhang","Jack Donnelly"]},{"key":"dc:creator","label":"Author","values":["Albadri, Mustafa Nameer"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2017-07-25T07:00:00Z"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Buck converter","Push-pull","Silicon carbide","Wide bandgap","Electrical and Computer Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright is held by the author. User is responsible for all copyright compliance.
"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.du.edu/etd/1312"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on Vout,Vmos stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.
In all tests and results it was found that SiC MOSFET made a significant improvement in the power efficiency and decreased power loss compared to Si MOSFET. Using SiC MOSFET in Push-Pull and Buck converter increased system efficiency and decreased MOSFET power loss. SiC is more immune against frequency change and performed better than Si MOSFET. Also, replacing Si MOSFET with SiC MOSFET added more voltage stability against the increase in load demand. These results will lead to design power converters with significant power loss and will decrease power dissipation. It will lead to better performance and a smaller circuit package because of the decrease in the heat sink and ventilation fans. It will save the power, decrease the cost and increase converter life time.
"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Simulation of SiC MOSFET Power Converters"]}]}],"canonical_facts":{"dc:contributor":["Mohammad Matin, Ph.D.","Jason Zhang","Jack Donnelly"],"dc:creator":["Albadri, Mustafa Nameer"],"dc:date.available":["2017-07-25T07:00:00Z"],"dc:description.abstract":["This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same circuits is done using silicon in the first case and silicon carbide MOSFET was implemented under the same conditions and parameters to investigate the silicon carbide MOSFET enhancement to the circuit. The modeling for silicon and silicon carbide MOSFET was created using the spice model provided from leading electronics companies as ROHM, CREE and INFINION. This spice model is provided by these companies to examine the effect of these components. This spice model can be examined using simulation software such as Multisim, PSpice, LTspice and others. The results focused on many aspects such as on Vout,Vmos stability, circuit efficiency and frequency change effect. It focused also on output power and MOSFET power loss because it is a very crucial aspect on any converter design. These results are done using the National Instrument simulation program (Multisim 14) and a sample of the results are validated using LT Spice.
In all tests and results it was found that SiC MOSFET made a significant improvement in the power efficiency and decreased power loss compared to Si MOSFET. Using SiC MOSFET in Push-Pull and Buck converter increased system efficiency and decreased MOSFET power loss. SiC is more immune against frequency change and performed better than Si MOSFET. Also, replacing Si MOSFET with SiC MOSFET added more voltage stability against the increase in load demand. These results will lead to design power converters with significant power loss and will decrease power dissipation. It will lead to better performance and a smaller circuit package because of the decrease in the heat sink and ventilation fans. It will save the power, decrease the cost and increase converter life time.
"],"dc:format":["application/pdf"],"dc:identifier":["https://digitalcommons.du.edu/etd/1312"],"dc:language":["en"],"dc:rights":["Copyright is held by the author. User is responsible for all copyright compliance.
"],"dc:subject":["Buck converter","Push-pull","Silicon carbide","Wide bandgap","Electrical and Computer Engineering"],"dc:title":["Simulation of SiC MOSFET Power Converters"],"thesis:degree_level":["Masters Thesis"],"thesis:degree_name":["M.S."]},"updated_at":"2026-07-24T02:02:19Z"}