Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits
type: CreativeWork
description: Power microelectronics can be considered as a combination of semiconductor high voltage integrated circuits, smart power discrete devices, low voltage circuits, and the fabrication technologies with the feature of high integrated density. It is always desirable that a lateral MOS controlled power device, as a key component in such a monolithic integrated circuit or system, can provide a large current carrying capability, high blocking voltage, fast switching speed, small area of occupation. However, conventional lateral MOS power devices, especially the devices with the operation of the conductivity modulation mode, have to be improved further to meet these requirements. Isolation technology, as an essential technology in PICs, is extremely important to realise the integration of high voltage devices with low voltage circuits. Therefore, this dissertation focuses on developing and investigating novel lateral MOS controlled power devices and new isolation technologies. An isolation technology, DELDI, has been analysed in detail. The REduced VERtical Field (REVERF) effect in the DELDI technology has been revealed for the first time. The results show that this effect dominates the breakdown voltage of lateral MOS power devices with an ideal REduced SURface Field (RESURF) effect. The influence of the physical and structural parameters of devices in the DELDI technology on the breakdown voltage has been investigated. Furthermore, it is found that the Kirk effect in the DELDI technology plays a key role on the on-state performance of devices with a conductivity modulation. This effect has been used to develop devices with the enhanced on-state performance. Two lateral MOS-controlled power devices, Lateral Thyristor-enhanced Insulated Gate Bipolar Transistor (LTIGBT) and Double p-well Lateral Emitter Switched Thyristor (DP-LEST), have been analysed in detail. The LTIGBT demonstrates a superior on-state performance in relation to a conventional LIGBT. At a current density o…
abstract: Power microelectronics can be considered as a combination of semiconductor high voltage integrated circuits, smart power discrete devices, low voltage circuits, and the fabrication technologies with the feature of high integrated density. It is always desirable that a lateral MOS controlled power device, as a key component in such a monolithic integrated circuit or system, can provide a large current carrying capability, high blocking voltage, fast switching speed, small area of occupation. However, conventional lateral MOS power devices, especially the devices with the operation of the conductivity modulation mode, have to be improved further to meet these requirements. Isolation technology, as an essential technology in PICs, is extremely important to realise the integration of high voltage devices with low voltage circuits. Therefore, this dissertation focuses on developing and investigating novel lateral MOS controlled power devices and new isolation technologies. An isolation technology, DELDI, has been analysed in detail. The REduced VERtical Field (REVERF) effect in the DELDI technology has been revealed for the first time. The results show that this effect dominates the breakdown voltage of lateral MOS power devices with an ideal REduced SURface Field (RESURF) effect. The influence of the physical and structural parameters of devices in the DELDI technology on the breakdown voltage has been investigated. Furthermore, it is found that the Kirk effect in the DELDI technology plays a key role on the on-state performance of devices with a conductivity modulation. This effect has been used to develop devices with the enhanced on-state performance. Two lateral MOS-controlled power devices, Lateral Thyristor-enhanced Insulated Gate Bipolar Transistor (LTIGBT) and Double p-well Lateral Emitter Switched Thyristor (DP-LEST), have been analysed in detail. The LTIGBT demonstrates a superior on-state performance in relation to a conventional LIGBT. At a current density o…
author: Qin, Zuxin
license: https://dora.dmu.ac.uk/bitstreams/348768bc-f84e-4b23-9341-7a364f630cb4/download
date published: 1988-02
date modified: 2026-07-24T06:18:40Z
provider: De Montfort University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: De Montfort University