{"id":{"repo_id":"cornell","oai_identifier":"oai:ecommons.cornell.edu:1813/116362"},"canonical_url":"https://search.dev.ndltd.org/etd/cornell/oai:ecommons.cornell.edu:1813/116362","repository":{"repo_id":"cornell","name":"Cornell University","base_url":"https://ecommons.cornell.edu/server/oai/request"},"display":{"title":"N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP","abstract":"With remarkable attributes of unique polarization characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device performance and reliability if not properly managed. This thesis intends to categorize different types of charge trapping effects at the oxide/semiconductor interface and highlight their influence on the device performance. The approach to identify and separate the influence of different oxide traps is suggested based on electrical characterization methods. The quality of the oxide/GaN interface is discussed in the context of experimentally fabricated MOS capacitors on n-type GaN (000), utilizing dielectric materials grown by plasma-enhanced atomic layer deposition. Additionally, this thesis presents findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey.","abstract_html":"With remarkable attributes of unique polarization characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device performance and reliability if not properly managed. This thesis intends to categorize different types of charge trapping effects at the oxide/semiconductor interface and highlight their influence on the device performance. The approach to identify and separate the influence of different oxide traps is suggested based on electrical characterization methods. The quality of the oxide/GaN interface is discussed in the context of experimentally fabricated MOS capacitors on n-type GaN (000), utilizing dielectric materials grown by plasma-enhanced atomic layer deposition. Additionally, this thesis presents findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey.","abstract_has_math":false,"creators":["Zhang, Hanqiao"],"institution":"Cornell University","degree_name":"M.S., Electrical and Computer Engineering","degree_level":"Master of Science","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":["Jena, Debdeep"],"year":2024,"date_issued":"2024-08","date_published":"2024-08","updated_at":"2026-07-24T01:49:00Z","subjects":["Gallium nitride"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/r7y5-4d18"],"render_values":[{"text":"https://doi.org/10.7298/r7y5-4d18","href":"https://doi.org/10.7298/r7y5-4d18","code":true}]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 12157","ProQuest Publication ID: 31336226"],"render_values":[{"text":"ProQuest Submission ID: 12157","href":null,"code":true},{"text":"ProQuest Publication ID: 31336226","href":null,"code":true}]}]},"links":{"outbound_url":"https://hdl.handle.net/1813/116362","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Jena, Debdeep"]},{"key":"dc:creator","label":"Author","values":["Zhang, Hanqiao"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2025-01-14T19:40:08Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2025-01-14T19:40:08Z"]},{"key":"dc:date.issued","label":"Date","values":["2024-08"]},{"key":"dc:type","label":"Dc Type","values":["dissertation or thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Master of Science"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S., Electrical and Computer Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Cornell University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Gallium nitride"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/r7y5-4d18"]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 12157","ProQuest Publication ID: 31336226"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1813/116362"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["92 pages"]},{"key":"dc:description.abstract","label":"Abstract","values":["With remarkable attributes of unique polarization characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device performance and reliability if not properly managed. This thesis intends to categorize different types of charge trapping effects at the oxide/semiconductor interface and highlight their influence on the device performance. The approach to identify and separate the influence of different oxide traps is suggested based on electrical characterization methods. The quality of the oxide/GaN interface is discussed in the context of experimentally fabricated MOS capacitors on n-type GaN (000), utilizing dielectric materials grown by plasma-enhanced atomic layer deposition. Additionally, this thesis presents findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP"]}]}],"canonical_facts":{"dc:contributor.committeemember":["Jena, Debdeep"],"dc:creator":["Zhang, Hanqiao"],"dc:date.accessioned":["2025-01-14T19:40:08Z"],"dc:date.available":["2025-01-14T19:40:08Z"],"dc:date.issued":["2024-08"],"dc:description":["92 pages"],"dc:description.abstract":["With remarkable attributes of unique polarization characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device performance and reliability if not properly managed. This thesis intends to categorize different types of charge trapping effects at the oxide/semiconductor interface and highlight their influence on the device performance. The approach to identify and separate the influence of different oxide traps is suggested based on electrical characterization methods. The quality of the oxide/GaN interface is discussed in the context of experimentally fabricated MOS capacitors on n-type GaN (000), utilizing dielectric materials grown by plasma-enhanced atomic layer deposition. Additionally, this thesis presents findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey."],"dc:format.mimetype":["application/pdf"],"dc:identifier.doi":["https://doi.org/10.7298/r7y5-4d18"],"dc:identifier.other":["ProQuest Submission ID: 12157","ProQuest Publication ID: 31336226"],"dc:identifier.uri":["https://hdl.handle.net/1813/116362"],"dc:language.iso":["en"],"dc:subject":["Gallium nitride"],"dc:title":["N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP"],"dc:type":["dissertation or thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Master of Science"],"thesis:degree_name":["M.S., Electrical and Computer Engineering"],"thesis:institution_name":["Cornell University"]},"updated_at":"2026-07-24T01:49:00Z"}