{"id":{"repo_id":"columbia-diss","oai_identifier":"oai:academiccommons.columbia.edu:10.7916/D8W09D9H"},"canonical_url":"https://search.dev.ndltd.org/etd/columbia-diss/oai:academiccommons.columbia.edu:10.7916/D8W09D9H","repository":{"repo_id":"columbia-diss","name":"Columbia University","base_url":"https://academiccommons.columbia.edu/oai"},"display":{"title":"Chemical Vapor Deposition Grown Pristine and Chemically Doped Monolayer Graphene","abstract":"Chemical vapor deposition growth has been a popular technique to produce large-area, high-quality monolayer graphene on Cu substrates ever since its first demonstration in 2009. Pristine graphene grown in such a way owns the natures of zero charge carriers and zero band gap. As an analogy to semi-conductor studies, substitutional doping with foreign atoms is a powerful way to tailor the electronic properties of this host materials. Within such a context, this thesis focuses on growing and characterizing both pristine and chemically-doped CVD grown monolayer graphene films at microscopic scales. We first synthesized pristine graphene on Cu single crystals in ultra-high-vacuum and subsequently characterized their properties by scanning tunneling microscopy/spectroscopy (STM/S), to learn the effects of Cu substrate crystallinity on the quality of graphene growth and understand the interactions between graphene films and Cu substrates. I n the subsequent chapters, we chemically doped graphene with nitrogen (N) and boron (B) atoms, and characterized their topographic and electronic structures via STM/S. We found that both N and B dopants substitionally dope graphene films, and contribute electron and hole carriers, respectively, into graphene at a rate of approximately 0.5 carrier/dopant. Apart from this, we have made comparisons between N- and B-doped graphene films in aspects of topographic features, dopant distribution and electronic perturbations. In the last part of this thesis, we used Raman spectroscopy mapping to investigate the N dopant distribution within and across structural grains. Future experiments are also brief discussed at the end of the thesis.","abstract_html":"Chemical vapor deposition growth has been a popular technique to produce large-area, high-quality monolayer graphene on Cu substrates ever since its first demonstration in 2009. Pristine graphene grown in such a way owns the natures of zero charge carriers and zero band gap. As an analogy to semi-conductor studies, substitutional doping with foreign atoms is a powerful way to tailor the electronic properties of this host materials. Within such a context, this thesis focuses on growing and characterizing both pristine and chemically-doped CVD grown monolayer graphene films at microscopic scales. We first synthesized pristine graphene on Cu single crystals in ultra-high-vacuum and subsequently characterized their properties by scanning tunneling microscopy/spectroscopy (STM/S), to learn the effects of Cu substrate crystallinity on the quality of graphene growth and understand the interactions between graphene films and Cu substrates. I n the subsequent chapters, we chemically doped graphene with nitrogen (N) and boron (B) atoms, and characterized their topographic and electronic structures via STM/S. We found that both N and B dopants substitionally dope graphene films, and contribute electron and hole carriers, respectively, into graphene at a rate of approximately 0.5 carrier/dopant. Apart from this, we have made comparisons between N- and B-doped graphene films in aspects of topographic features, dopant distribution and electronic perturbations. In the last part of this thesis, we used Raman spectroscopy mapping to investigate the N dopant distribution within and across structural grains. Future experiments are also brief discussed at the end of the thesis.","abstract_has_math":false,"creators":["Zhao, Liuyan"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013","date_published":"2013","updated_at":"2026-07-24T01:44:34Z","subjects":["Condensed matter","Physics","Chemical vapor deposition","Graphene","Copper crystals","Monomolecular films"],"languages":["English"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://doi.org/10.7916/D8W09D9H","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Zhao, Liuyan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2013"]},{"key":"dc:type","label":"Dc Type","values":["Theses"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Condensed matter","Physics","Chemical vapor deposition","Graphene","Copper crystals","Monomolecular films"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://doi.org/10.7916/D8W09D9H"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Chemical vapor deposition growth has been a popular technique to produce large-area, high-quality monolayer graphene on Cu substrates ever since its first demonstration in 2009. Pristine graphene grown in such a way owns the natures of zero charge carriers and zero band gap. As an analogy to semi-conductor studies, substitutional doping with foreign atoms is a powerful way to tailor the electronic properties of this host materials. Within such a context, this thesis focuses on growing and characterizing both pristine and chemically-doped CVD grown monolayer graphene films at microscopic scales. We first synthesized pristine graphene on Cu single crystals in ultra-high-vacuum and subsequently characterized their properties by scanning tunneling microscopy/spectroscopy (STM/S), to learn the effects of Cu substrate crystallinity on the quality of graphene growth and understand the interactions between graphene films and Cu substrates. I n the subsequent chapters, we chemically doped graphene with nitrogen (N) and boron (B) atoms, and characterized their topographic and electronic structures via STM/S. We found that both N and B dopants substitionally dope graphene films, and contribute electron and hole carriers, respectively, into graphene at a rate of approximately 0.5 carrier/dopant. Apart from this, we have made comparisons between N- and B-doped graphene films in aspects of topographic features, dopant distribution and electronic perturbations. In the last part of this thesis, we used Raman spectroscopy mapping to investigate the N dopant distribution within and across structural grains. Future experiments are also brief discussed at the end of the thesis."]},{"key":"dc:title","label":"Title","values":["Chemical Vapor Deposition Grown Pristine and Chemically Doped Monolayer Graphene"]}]}],"canonical_facts":{"dc:creator":["Zhao, Liuyan"],"dc:date":["2013"],"dc:description":["Chemical vapor deposition growth has been a popular technique to produce large-area, high-quality monolayer graphene on Cu substrates ever since its first demonstration in 2009. Pristine graphene grown in such a way owns the natures of zero charge carriers and zero band gap. As an analogy to semi-conductor studies, substitutional doping with foreign atoms is a powerful way to tailor the electronic properties of this host materials. Within such a context, this thesis focuses on growing and characterizing both pristine and chemically-doped CVD grown monolayer graphene films at microscopic scales. We first synthesized pristine graphene on Cu single crystals in ultra-high-vacuum and subsequently characterized their properties by scanning tunneling microscopy/spectroscopy (STM/S), to learn the effects of Cu substrate crystallinity on the quality of graphene growth and understand the interactions between graphene films and Cu substrates. I n the subsequent chapters, we chemically doped graphene with nitrogen (N) and boron (B) atoms, and characterized their topographic and electronic structures via STM/S. We found that both N and B dopants substitionally dope graphene films, and contribute electron and hole carriers, respectively, into graphene at a rate of approximately 0.5 carrier/dopant. Apart from this, we have made comparisons between N- and B-doped graphene films in aspects of topographic features, dopant distribution and electronic perturbations. In the last part of this thesis, we used Raman spectroscopy mapping to investigate the N dopant distribution within and across structural grains. Future experiments are also brief discussed at the end of the thesis."],"dc:identifier":["https://doi.org/10.7916/D8W09D9H"],"dc:language":["English"],"dc:subject":["Condensed matter","Physics","Chemical vapor deposition","Graphene","Copper crystals","Monomolecular films"],"dc:title":["Chemical Vapor Deposition Grown Pristine and Chemically Doped Monolayer Graphene"],"dc:type":["Theses"]},"updated_at":"2026-07-24T01:44:34Z"}