Investigation of Group V doping and passivating oxides to reduce the voltage deficit in CdTe solar cells
type: CreativeWork
description: Thin film cadmium telluride is one of the most successful photovoltaic technologies on the market today. Second only to silicon in yearly output and accounting for 40% of U.S. utility-scale photovoltaic installation, CdTe is known for its ease of manufacture, ideal bandgap, and low levelized cost of energy. Despite its commercial success, CdTe underperforms compared to its theoretical potential. The current world record CdTe device is only 21.0% compared to a theoretical maximum of 33.1%. This significant discrepancy in efficiencies can mostly be attributed to the poor open-circuit voltage of CdTe devices. Compared to silicon technologies, CdTe has a large voltage deficiency, exceeding 250 mV. While copper doping has traditionally been used for CdTe devices, it has proven to be incapable of sufficiently doping CdTe. Copper typically dopes CdTe in the 1014 to 1015 holes/cm3 range where most models predict that 1016–1017 is needed. Additionally, interstitial copper is a fast diffuser in CdTe, and can lead to numerous stability issues. As an alternative to copper, this work explores arsenic as a dopant for CdTe. Using a novel arsenic doping technique, hole concentrations greater than 1015 cm-3, microsecond lifetimes, and increased radiative efficiency are achieved. These are important prerequisites to achieving higher voltages. Achieving high doping levels alone is not sufficient to achieve higher device performance. A well-passivated and carrier selective contact is needed to ensure that electron-hole pairs do not recombine and are extracted as useable energy. Aluminum oxide has been shown to passivate CdTe surfaces. This work illustrates the explorations of using Al2O¬3 as a passivation layer, pairing it with highly doped amorphous silicon as a hole contact, resulting in excess-carrier lifetimes up to 8 µs, the highest reported to date for polycrystalline Cd(Se)Te. Although the inclusion of arsenic doping and an aluminum oxide back contact are each explored separatel…
abstract: Thin film cadmium telluride is one of the most successful photovoltaic technologies on the market today. Second only to silicon in yearly output and accounting for 40% of U.S. utility-scale photovoltaic installation, CdTe is known for its ease of manufacture, ideal bandgap, and low levelized cost of energy. Despite its commercial success, CdTe underperforms compared to its theoretical potential. The current world record CdTe device is only 21.0% compared to a theoretical maximum of 33.1%. This significant discrepancy in efficiencies can mostly be attributed to the poor open-circuit voltage of CdTe devices. Compared to silicon technologies, CdTe has a large voltage deficiency, exceeding 250 mV. While copper doping has traditionally been used for CdTe devices, it has proven to be incapable of sufficiently doping CdTe. Copper typically dopes CdTe in the 1014 to 1015 holes/cm3 range where most models predict that 1016–1017 is needed. Additionally, interstitial copper is a fast diffuser in CdTe, and can lead to numerous stability issues. As an alternative to copper, this work explores arsenic as a dopant for CdTe. Using a novel arsenic doping technique, hole concentrations greater than 1015 cm-3, microsecond lifetimes, and increased radiative efficiency are achieved. These are important prerequisites to achieving higher voltages. Achieving high doping levels alone is not sufficient to achieve higher device performance. A well-passivated and carrier selective contact is needed to ensure that electron-hole pairs do not recombine and are extracted as useable energy. Aluminum oxide has been shown to passivate CdTe surfaces. This work illustrates the explorations of using Al2O¬3 as a passivation layer, pairing it with highly doped amorphous silicon as a hole contact, resulting in excess-carrier lifetimes up to 8 µs, the highest reported to date for polycrystalline Cd(Se)Te. Although the inclusion of arsenic doping and an aluminum oxide back contact are each explored separatel…
author: Danielson, Adam H., author
author: Sampath, W. S., advisor
author: James, Susan P., committee member
author: Popat, Ketul C., committee member
author: Sites, James R., committee member
language: eng
language: English
date published: 2022
date modified: 2026-07-27T19:13:11Z
provider: Colorado State University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Colorado State University. Libraries

PropertyValue
property ID: Handle
value: https://hdl.handle.net/10217/236018

PropertyValue
property ID: DOI
value: 10.25675/3.02466