Characterization of tellurium back contact layer for CdTe thin film devices

Cadmium Telluride (CdTe) thin film photovoltaic technology has shown favorable progress due to inexpensive and efficient processing techniques. However, efficiencies have yet to reach the overall projected CdTe device efficiency, with the back contact being a main source of CdTe performance limitations. Tellurium (Te) applied as a back contact has led to significant increases in fill factor and an overall progress in device efficiency. Devices deposited with Te show significant improvement in uniformity, even without intentional Cu doping, when compared to devices without Te. In current - density measurements, Te shows stability even at low temperatures, which is indicative of a low barrier developed at the CdTe/Te interface. X-ray and ultra-violet photoelectron spectroscopy were carried out to examine the valence band offset at the CdTe/Te back contact interface. The valence band offset was shown to be highly dependent on the Te thickness and was largely affected by oxidation and contamination at the surface. Capacitance measurements were carried out to study the effect Te has on the absorber depletion width. Data indicate a decreased depletion width with Te applied at the back of thin film CdTe devices, which agrees with increased device performance. Te thickness was varied in all studies to understand the effect of application thickness on device performance and material characteristics. With a thicker Te layer leading to overall improvement in device performance and favorable device characteristics.

Name thesis:degree_name

Master of Science (M.S.)

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Mechanical Engineering

Grantor dc:publisher

Colorado State University. Libraries

Year dc:date.issued

2018

Authors dc:creator

• Moffett, Christina, author
• Sampath, W. S., advisor
• Sites, James, committee member
• Popat, Ketul, committee member

• back contact interface
• photovoltaics
• thin film
• cadmium telluride
• back contact
• tellurium

Statement dc:rights

• Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.

Language dc:language.iso

eng, English

Identifier URI

https://doi.org/10.25675/3.018557

OAI identifier oai:identifier

oai:mountainscholar.org:10217/191313