{"id":{"repo_id":"carleton","oai_identifier":"oai:carleton.scholaris.ca:20.500.14718/39619"},"canonical_url":"https://search.dev.ndltd.org/etd/carleton/oai:carleton.scholaris.ca:20.500.14718/39619","repository":{"repo_id":"carleton","name":"Carleton University","base_url":"https://carleton.scholaris.ca/server/oai/request"},"display":{"title":"Electrothermal Analysis of Gallium Nitride Island Transistor eHEMT Devices for Fault Tolerant Design","abstract":"A full 3D thermal simulation structure was built using Atar based on the GS66516T device from GaN Systems with individually controllable generation regions for each island transistor in an array. The thermal model was linked to electrical SPICE models in OptiSPICE to produce an electrothermal simulator to be used to investigate the device behaviour when cells in the array are deactivated. The individual simulations were all verified against models, previous simulations, and physical testing to ensure that the simulations behaved accordingly. The results of the electrothermal simulation verification showed that there was a less than 5% error between the measured and simulated values, providing an accurate simulation of the electrothermal behaviour of the GS66516T device. Electrothermal simulations were then run for various cases of random cells deactivated. From the simulations, data was gathered and interpreted to show the possibilities of the electrothermal simulations for determining device behaviour with cells deactivated.","abstract_html":"A full 3D thermal simulation structure was built using Atar based on the GS66516T device from GaN Systems with individually controllable generation regions for each island transistor in an array. The thermal model was linked to electrical SPICE models in OptiSPICE to produce an electrothermal simulator to be used to investigate the device behaviour when cells in the array are deactivated. The individual simulations were all verified against models, previous simulations, and physical testing to ensure that the simulations behaved accordingly. The results of the electrothermal simulation verification showed that there was a less than 5% error between the measured and simulated values, providing an accurate simulation of the electrothermal behaviour of the GS66516T device. Electrothermal simulations were then run for various cases of random cells deactivated. From the simulations, data was gathered and interpreted to show the possibilities of the electrothermal simulations for determining device behaviour with cells deactivated.","abstract_has_math":false,"creators":["de Sousa, Evan"],"institution":"Carleton University","degree_name":"Master of Applied Science (M.App.Sc.)","degree_level":"Master's","degree_discipline":"Engineering, Electrical and Computer","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018","date_published":"2018","updated_at":"2026-07-24T01:34:29Z","subjects":[],"languages":["en"],"rights":["Copyright © 2018 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner."],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.doi","label":"DOI","values":["10.22215/etd/2018-13319"],"render_values":[{"text":"10.22215/etd/2018-13319","href":"https://doi.org/10.22215/etd/2018-13319","code":true}]}]},"links":{"outbound_url":"https://hdl.handle.net/20.500.14718/39619","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["de Sousa, Evan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2025-04-08T19:44:58Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2025-04-08T19:44:58Z"]},{"key":"dc:date.issued","label":"Date","values":["2018"]},{"key":"dc:publisher","label":"Institution","values":["Carleton University"]},{"key":"dc:type","label":"Dc Type","values":["thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering, Electrical and Computer"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Master's"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Applied Science (M.App.Sc.)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright © 2018 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["10.22215/etd/2018-13319"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/20.500.14718/39619"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A full 3D thermal simulation structure was built using Atar based on the GS66516T device from GaN Systems with individually controllable generation regions for each island transistor in an array. The thermal model was linked to electrical SPICE models in OptiSPICE to produce an electrothermal simulator to be used to investigate the device behaviour when cells in the array are deactivated. The individual simulations were all verified against models, previous simulations, and physical testing to ensure that the simulations behaved accordingly. The results of the electrothermal simulation verification showed that there was a less than 5% error between the measured and simulated values, providing an accurate simulation of the electrothermal behaviour of the GS66516T device. Electrothermal simulations were then run for various cases of random cells deactivated. From the simulations, data was gathered and interpreted to show the possibilities of the electrothermal simulations for determining device behaviour with cells deactivated."]},{"key":"dc:title","label":"Title","values":["Electrothermal Analysis of Gallium Nitride Island Transistor eHEMT Devices for Fault Tolerant Design"]}]}],"canonical_facts":{"dc:creator":["de Sousa, Evan"],"dc:date.accessioned":["2025-04-08T19:44:58Z"],"dc:date.available":["2025-04-08T19:44:58Z"],"dc:date.issued":["2018"],"dc:description.abstract":["A full 3D thermal simulation structure was built using Atar based on the GS66516T device from GaN Systems with individually controllable generation regions for each island transistor in an array. The thermal model was linked to electrical SPICE models in OptiSPICE to produce an electrothermal simulator to be used to investigate the device behaviour when cells in the array are deactivated. The individual simulations were all verified against models, previous simulations, and physical testing to ensure that the simulations behaved accordingly. The results of the electrothermal simulation verification showed that there was a less than 5% error between the measured and simulated values, providing an accurate simulation of the electrothermal behaviour of the GS66516T device. Electrothermal simulations were then run for various cases of random cells deactivated. From the simulations, data was gathered and interpreted to show the possibilities of the electrothermal simulations for determining device behaviour with cells deactivated."],"dc:identifier.doi":["10.22215/etd/2018-13319"],"dc:identifier.uri":["https://hdl.handle.net/20.500.14718/39619"],"dc:language.iso":["en"],"dc:publisher":["Carleton University"],"dc:rights":["Copyright © 2018 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner."],"dc:title":["Electrothermal Analysis of Gallium Nitride Island Transistor eHEMT Devices for Fault Tolerant Design"],"dc:type":["thesis"],"thesis:degree_discipline":["Engineering, Electrical and Computer"],"thesis:degree_level":["Master's"],"thesis:degree_name":["Master of Applied Science (M.App.Sc.)"]},"updated_at":"2026-07-24T01:34:29Z"}