{"id":{"repo_id":"carleton","oai_identifier":"oai:carleton.scholaris.ca:20.500.14718/39161"},"canonical_url":"https://search.dev.ndltd.org/etd/carleton/oai:carleton.scholaris.ca:20.500.14718/39161","repository":{"repo_id":"carleton","name":"Carleton University","base_url":"https://carleton.scholaris.ca/server/oai/request"},"display":{"title":"Ionically-Coupled Non-Linear Variable Resistors for Neuromorphic Applications","abstract":"A means of simulating and fabricating memristor-like non-linear resistors for use in large arrays to form cellular neural networks is developed and investigated. The device is based on the action of ion intercalation of lithium ions into PEDOT:PSS active layers causing resistance to increase, similar to a memristor. A simple model is developed and implemented in SPICE to predict device behaviour, and a fabrication technique to rapidly create such a device by hand is detailed. Device testing confirmed the non-self-crossing hysteresis behaviour at a frequency of 10 Hz given a sinusoidal input. These results are compared to the aforementioned simulations as well as previous measurements performed in the group on similar devices, and are shown to be reasonably accurate.","abstract_html":"A means of simulating and fabricating memristor-like non-linear resistors for use in large arrays to form cellular neural networks is developed and investigated. The device is based on the action of ion intercalation of lithium ions into PEDOT:PSS active layers causing resistance to increase, similar to a memristor. A simple model is developed and implemented in SPICE to predict device behaviour, and a fabrication technique to rapidly create such a device by hand is detailed. Device testing confirmed the non-self-crossing hysteresis behaviour at a frequency of 10 Hz given a sinusoidal input. These results are compared to the aforementioned simulations as well as previous measurements performed in the group on similar devices, and are shown to be reasonably accurate.","abstract_has_math":false,"creators":["Lee, Aaron Michael"],"institution":"Carleton University","degree_name":"Master of Applied Science (M.App.Sc.)","degree_level":"Master's","degree_discipline":"Engineering, Electrical and Computer","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016","date_published":"2016","updated_at":"2026-07-24T01:34:25Z","subjects":[],"languages":["en"],"rights":["Copyright © 2016 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. 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A simple model is developed and implemented in SPICE to predict device behaviour, and a fabrication technique to rapidly create such a device by hand is detailed. Device testing confirmed the non-self-crossing hysteresis behaviour at a frequency of 10 Hz given a sinusoidal input. These results are compared to the aforementioned simulations as well as previous measurements performed in the group on similar devices, and are shown to be reasonably accurate."]},{"key":"dc:title","label":"Title","values":["Ionically-Coupled Non-Linear Variable Resistors for Neuromorphic Applications"]}]}],"canonical_facts":{"dc:creator":["Lee, Aaron Michael"],"dc:date.accessioned":["2025-04-08T19:36:41Z"],"dc:date.available":["2025-04-08T19:36:41Z"],"dc:date.issued":["2016"],"dc:description.abstract":["A means of simulating and fabricating memristor-like non-linear resistors for use in large arrays to form cellular neural networks is developed and investigated. The device is based on the action of ion intercalation of lithium ions into PEDOT:PSS active layers causing resistance to increase, similar to a memristor. A simple model is developed and implemented in SPICE to predict device behaviour, and a fabrication technique to rapidly create such a device by hand is detailed. Device testing confirmed the non-self-crossing hysteresis behaviour at a frequency of 10 Hz given a sinusoidal input. These results are compared to the aforementioned simulations as well as previous measurements performed in the group on similar devices, and are shown to be reasonably accurate."],"dc:identifier.doi":["10.22215/etd/2016-11685"],"dc:identifier.uri":["https://hdl.handle.net/20.500.14718/39161"],"dc:language.iso":["en"],"dc:publisher":["Carleton University"],"dc:rights":["Copyright © 2016 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. 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