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Department of Electrical Engineering

Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators

Abstract

dc:description.abstract

This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build microwave DROs. The second is to present the practical results obtained from Dielectric Resonator Bandreject and Bandpass filters (DR BRFs and DR BPFs). The last is to present and compare results from a DR stabilised microstrip oscillator and three types of series feedback DROs. Narrowband oscillators are usually evaluated in terms of their frequency stability, reliability, size, cost, efficiency and output power characteristics. In terms of these parameters DROs outperform Gunn cavity oscillators and are only bettered by crystal locked sources in terms of frequency temperature stability and long-term stability. The components of a GaAs MESFET MIC DRO possess ideal properties for the construction of a narrowband source with the exception of the long term stability of the GaAs MESFET. GaAs MESFET•DROs have the best published DRO results for efficiency, output power, power temperature stability and external Q factor. Basic oscillator theory derived by Kurokawa can be applied to both negative resistance and feedback oscillators. Impedance locus, device-line and operating point concepts provide a convenient framework for understanding hysteresis in microwave oscillators. The work by Kurokawa can also be translated into the S-parameter domain which has proved convenient for the design of microwave oscillators.

Degree

thesis:*
Grantor dc:publisher.institution
Department of Electrical Engineering
Year dc:date.issued
1988

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Crouch, David Andrew
Advisor dc:contributor.advisor
  • Downing, B J

Rights

Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/11427/8329
OAI identifier oai:identifier
oai:open.uct.ac.za:11427/8329

Chain of custody

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Harvested from
University of Cape Town
Base URL
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Last updated
2026-07-22
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citation

Crouch, David Andrew. Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators. Department of Electrical Engineering, 1988. http://hdl.handle.net/11427/8329