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Department of Physics

Microstructure, stress and defect evolution under illumination in hydrogenated amorphous silicon (a-Si:H)

Abstract

dc:description.abstract

The purpose of this study is firstly to investigate the relation between microstructure, stress and hydrogen distribution in as deposited hydrogenated amorphous silicon (a-Si:H) layers, and secondly the investigation of the influence of illumination on hydrogen evolution and its relationship with the strain in illuminated layers.

Degree

thesis:*
Grantor dc:publisher.institution
Department of Physics
Year dc:date.issued
2008

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Minani, Evariste
Advisors dc:contributor.advisor
  • Britton, David T
  • Härting, Margit

Rights

Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/11427/6540
OAI identifier oai:identifier
oai:open.uct.ac.za:11427/6540

Chain of custody

source
Harvested from
University of Cape Town
Base URL
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Last updated
2026-07-22
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citation

Minani, Evariste. Microstructure, stress and defect evolution under illumination in hydrogenated amorphous silicon (a-Si:H). Department of Physics, 2008. http://hdl.handle.net/11427/6540