Development of a plasma source ion implantation facility for the modification of materials' surfaces

In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are implanted into materials to modify surface properties, achieving surface hardening, increased wear and corrosion resistance. Plasma Source Ion Implantation is alos used for doping semiconductors and could form an essential step in the manufacture of multilayered wafers. This thesis describes the development and construction of the plasma implantation facility at the Materials Research Group of the Naitonal Accelerator Centre; in particular, the development of the Plasma Assisted Materials Modification Laboratory, the analytical tools available at the Materials Research Group and surrounding universities, basic research into the implantation of steels, the x-rays emitted as a side-effect of plasma source ion implantation and the development of an analytical technique of interest to silicon wafer-cutting technologies.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2001

Author dc:creator

• Meyer, Kevin Alan

Advisors dc:contributor.advisor

• Prozesky, Victor M
• Comrie, Craig M
• Alport, Michael J

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6538

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6538